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Results 1-10 of 13 (Search time: 0.013 seconds).

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Issue DateTitleAuthor(s)
1-Nov-1998Effects of thermal N-2 annealing on passivation capability of sputtered Ta(-N) layers against Cu oxidationChuang, JC; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-1998Properties of sputtered Cr-O and reactively sputtered Cr-N-O as passivation layers against copper oxidationChuang, JC; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
14-Dec-1998Formation of Cr-O and Cr-N-O films serving as Cu oxidation resistant layers and their N-2 pre-sintering effectChuang, JC; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-1998Optimization of machining conditions for turning cylindrical stocks into continuous finished profilesChen, MC; Su, CT; 工業工程與管理學系; Department of Industrial Engineering and Management
8-Jun-1998Properties of thin Ta-N films reactively sputtered on Cu/SiO2/Si substratesChuang, JC; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-1998Barrier properties of very thin Ta and TaN layers against copper diffusionWang, MT; Lin, YC; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-1998Thermal stability of selective chemical vapor deposited tungsten contact and effects of in situ N-2 plasma treatmentWang, MT; Wang, PC; Chuang, MC; Chen, LJ; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-1998Experience in designing a using TCP as transport protocol VOD system over a dedicated networkLu, DJ; Wang, YC; Ho, JM; Chen, MC; Ko, MT; 資訊工程學系; Department of Computer Science
1-Dec-1998Thin-film properties and barrier effectiveness of chemically vapor deposited amorphous WSix filmWang, MT; Lin, YC; Lee, JY; Wang, CC; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-1998Sputtered Cr and reactively sputtered CrNx serving as barrier layers against copper diffusionChuang, JC; Tu, SL; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics