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Issue DateTitleAuthor(s)
1-Jul-1998Interfacial reactions of Ni on Si0.76Ge0.24 and Si by pulsed laser annealingLuo, JS; Lin, WT; Chang, CY; Tsai, WC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
8-Jan-1998Suppression of boron penetration in p(+) polysilicon gate using Si-B diffusion sourceChao, TS; Kuo, CP; Lei, TF; Chen, TP; Huang, TY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1998Catalytic decomposition of ozone in the presence of water vaporTsai, WT; Chang, CY; Jung, FH; Chiu, CY; Huang, WH; Yu, YH; Liou, HT; Ku, Y; Chen, JN; Mao, CF; 環境工程研究所; Institute of Environmental Engineering
1-Jan-1998A refined model for ozone mass transfer in a bubble columnHuang, WH; Chang, CY; Chiu, CY; Lee, SJ; Yu, YH; Liou, HT; Ku, Y; Chen, JN; 環境工程研究所; Institute of Environmental Engineering
1-Jul-1998Comparison of N-2 and NH3 plasma passivation effects on polycrystalline silicon thin-film transistorsLee, YS; Lin, HY; Lei, TF; Huang, TY; Chang, TC; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-1998A novel fabrication technique of T-shaped gates using an EGMEA and PMIPK multilayer resist system and a single-step electron-beam exposureLai, YL; Lai, YK; Chang, CY; Chang, EY; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
19-Feb-1998Effects of N2O-annealed sacrificial oxide on the short-channel effects of nMOSFETsJong, FC; Huang, TY; Chao, TS; Lin, HC; Wang, MF; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-1998Direct oxidation of Si1-xGex layers using Vacuum-Ultra-Violet light radiation in oxygenChen, LP; Chan, YC; Chang, SJ; Huang, GW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2-Nov-1998Characterization of multilayered Ti/TiN films grown by chemical vapor depositionHu, JC; Chang, TC; Chen, LJ; Yang, YL; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-1998Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidationLai, CS; Chao, TS; Lei, TF; Lee, CL; Huang, TY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics