Search


  • 1

Results 1-10 of 10 (Search time: 0.015 seconds).

Item hits:
Issue DateTitleAuthor(s)
1-Jul-1992NUMERICAL-ANALYSIS OF THE PHOTOEFFECTS IN GAAS-MESFETSLO, SH; LEE, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-1992NUMERICAL-SIMULATION OF THE HYSTERESIS IN THE SIDEGATING EFFECT IN GAAS-MESFETS - THE EFFECT OF SCHOTTKY CONTACTSCHANG, SJ; LEE, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-1992A NOVEL TECHNIQUE FOR LOW-THRESHOLD AND HIGH-POWER INGAAS/GAAS STRAINED-LAYER 0.98-MU-M BURIED HETEROSTRUCTURE LASER FABRICATIONLIOU, DC; CHIANG, WH; LEE, CP; CHANG, KH; LIU, DG; WU, JS; TU, YK; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
1-Aug-1992FRANZ-KELDYSH OSCILLATIONS OF DELTA-DOPED GAASHSU, TM; TIEN, YC; LU, NH; TSAI, SP; LIU, DG; LEE, CP; 電控工程研究所; Institute of Electrical and Control Engineering
15-Aug-1992PHOTOREFLECTION STUDY ON THE SURFACE ELECTRIC-FIELD OF DELTA-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXYLIU, DG; CHANG, KH; LEE, CP; HSU, TM; TIEN, YC; 電控工程研究所; Institute of Electrical and Control Engineering
1-Mar-1992HIGH-QUALITY ALGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURESCHANG, KH; WU, JS; LIU, DG; LIOU, DC; LEE, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-1992NUMERICAL-ANALYSIS OF THE LOOPING EFFECT IN GAAS-MESFETSLO, SH; LEE, CP; 電子工程學系及電子研究所; 奈米中心; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
15-Sep-1992INFLUENCE OF THIN PROTECTIVE INAS LAYERS ON THE OPTICAL-QUALITY OF ALGAAS AND QUANTUM-WELLSTSAI, KL; CHANG, KH; LEE, CP; HUANG, KF; CHANG, Y; FAN, JC; LIU, DG; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-1992INTRINSIC AND EXTRINSIC EFFECTS ON PERFORMANCE LIMITATION OF ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURESWU, JS; LEE, CP; CHANG, CY; CHANG, KH; LIU, DG; LIOU, DC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-May-1992DIRECT OBSERVATION OF SI DELTA-DOPED GAAS BY TRANSMISSION ELECTRON-MICROSCOPYLIU, DG; FAN, JC; LEE, CP; TSAI, CM; CHANG, KH; LIOU, DC; LEE, TL; CHEN, LJ; 電控工程研究所; Institute of Electrical and Control Engineering