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| Issue Date | Title | Author(s) |
|---|---|---|
| 2013 | 藉由氮化鋁層間鈍化層之插入改善氮化矽氮化鋁鎵/氮化鎵金屬絕緣半導體高電子遷移率電晶體之漏電流及電流潰散效應 | 賴俊霖; Lai, Chung-Ling; 張翼; 馬哲申; Chang, Yi; Ma,Jer-Shen; 照明與能源光電研究所 |
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- 1 AlGaN/GaN
- 1 AlN
- 1 Breakdown voltage
- 1 Current Slump
- 1 GaN
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- 1 Leakage Current
- 1 崩潰電壓
- 1 氮化鎵
- 1 漏電流
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- 1 2013