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Issue DateTitleAuthor(s)
28-Feb-1991INVESTIGATION OF INDIUM DOPING AND INCORPORATION IN ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURESWU, JS; CHANG, KH; LEE, CP; CHANG, CY; LIU, DG; LIOU, DC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-1991ANALYSIS OF SEVERAL HIGH-ELECTRON-MOBILITY-TRANSISTOR STRUCTURES BY A SELF-CONSISTENT METHODLIU, DG; CHIN, TC; LEE, CP; HWANG, HL; 電控工程研究所; Institute of Electrical and Control Engineering
15-Oct-1990INFLUENCE OF INDIUM DOPING ON ALGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXYCHANG, KH; LEE, CP; WU, JS; LIU, DG; LIOU, DC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
1-Feb-19952-DIMENSIONAL BI-PERIODIC GRATING-COUPLED ONE-COLOR AND 2-COLOR QUANTUM-WELL INFRARED PHOTODETECTORSTSAI, KL; LEE, CP; TSANG, JS; CHEN, HR; CHANG, KH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-1993EVIDENCE OF ZERO POTENTIAL SPIKE ENERGY IN ALGAAS GAAS HETEROSTRUCTURE EMITTER BIPOLAR-TRANSISTORSCHEN, HR; LEE, CP; CHANG, CY; TSAI, KL; TSANG, JS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-1993NUMERICAL-SIMULATION OF THE SUPPRESSION OF SIDEGATING EFFECTS IN GAAS-MESFETS BY ION-BOMBARDMENTCHANG, SJ; LEE, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-1991NUMERICAL-ANALYSIS OF THE FREQUENCY-DEPENDENT OUTPUT CONDUCTANCE OF GAAS-MESFETSLO, SH; LEE, CP; 物理研究所; 電控工程研究所; Institute of Physics; Institute of Electrical and Control Engineering
28-Jun-19932-COLOR INFRARED PHOTODETECTOR USING GAAS/ALGAAS AND STRAINED INGAAS/ALGAAS MULTIQUANTUM WELLSTSAI, KL; CHANG, KH; LEE, CP; HUANG, KF; TSANG, JS; CHEN, HR; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-Mar-1992HIGH-QUALITY ALGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURESCHANG, KH; WU, JS; LIU, DG; LIOU, DC; LEE, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-1992NUMERICAL-ANALYSIS OF THE LOOPING EFFECT IN GAAS-MESFETSLO, SH; LEE, CP; 電子工程學系及電子研究所; 奈米中心; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center