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Issue DateTitleAuthor(s)
1-May-2005Influence of dislocation density on photoluminescence intensity of GaNFalth, JF; Gurusinghe, MN; Liu, XY; Andersson, TG; Ivanov, IG; Monemar, B; Yao, HH; Wang, SC; 光電工程學系; Department of Photonics
15-Nov-2004Physical characteristics and photoluminescence properties of phosphorous-implanted ZnO thin filmsLin, CC; Chen, SY; Cheng, SY; 材料科學與工程學系; Department of Materials Science and Engineering
1-Aug-2010Morphology and optical properties of single- and multi-layer InAs quantum dotsHsu, Chiung-Chih; Hsu, Ray-Quen; Wu, Yue-Han; 機械工程學系; 材料科學與工程學系; Department of Mechanical Engineering; Department of Materials Science and Engineering
1-Jul-2006Optical properties of high density InGaN QDs grown by MOCVDLee, CK; Hsu, JH; Wang, DC; Chang, YH; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
22-May-2001Investigation of beryllium implanted P-type GaNYu, CC; Chu, CF; Tsai, JY; Wang, SC; 光電工程學系; Department of Photonics
1-Apr-2008Tunable light emissions from thermally evaporated In2O3 nanostructures grown at different growth temperaturesKo, Tsung-Shine; Chu, Chia-Pu; Chen, Jun-Rong; Lu, Tien-Chang; Kuo, Hao-Chung; Wang, Shing-Chung; 光電工程學系; Department of Photonics
1998The investigation of structures, defects and electrical properties of GaAs films implanted with arsenic ionsChen, WC; Lee, SC; Chang, CS; 光電工程學系; Department of Photonics
15-Jan-2002Addenda to photoluminescence and electron paramagnetic resonance studies of defect centers in porous siliconLue, HT; Tseng, CY; Lue, JT; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2000Optical phonon emission in GaAs/AlAs and GaAs/Al0.7Ga0.3As multiple quantum well structuresSun, KW; Wang, CM; Chang, HY; Wang, SY; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-1999Preparation and characterization of garnet phosphor nanoparticles derived from oxalate coprecipitationChen, TM; Chen, SC; Yu, CJ; 應用化學系; Department of Applied Chemistry