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Issue DateTitleAuthor(s)
1-Dec-2010Analysis of Degradation Mechanism in SONOS-TFT Under Hot-Carrier OperationChen, Te-Chih; Chang, Ting-Chang; Chen, Shih-Ching; Hsieh, Tien-Yu; Jian, Fu-Yen; Lin, Chia-Sheng; Li, Hung-Wei; Lee, Ming-Hsien; Chen, Jim-Shone; Shih, Ching-Chieh; 光電工程學系; Department of Photonics
3-Dec-2007Memory effect of RF sputtered ZrO2 thin filmsLin, Chih-Yang; Wu, Chung-Yi; Wu, Chen-Yu; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012前瞻新結構電阻式記憶體元件之製作( I )施敏; SZE SIMON MIN; 國立交通大學電子工程學系及電子研究所
2012電阻式記憶體新穎材料之開發與機制研究( I )施敏; SZE SIMON MIN; 國立交通大學電子工程學系及電子研究所
1-Jun-2008Comparison of MONOS memory device integrity when using Hf(1-x-y)N(x)O(y) trapping layers with different N compositionsYang, H. J.; Cheng, C. F.; Chen, W. B.; Lin, S. H.; Yeh, F. S.; McAlister, Sean P.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011異質整合分子/矽電子元件:高電荷密度與電致變色分子浮動閘極記憶體之開發侯拓宏; Hou Tuo-Hung; 國立交通大學電子工程學系及電子研究所
1-Mar-2009Poly-Si Thin-Film Transistor Nonvolatile Memory Using Ge Nanocrystals as a Charge Trapping Layer Deposited by the Low-Pressure Chemical Vapor DepositionKuo, Po-Yi; Chao, Tien-Sheng; Huang, Jyun-Siang; Lei, Tan-Fu; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
2010以過渡金屬氧化物為基礎的新世代非揮發性電阻式記憶體侯拓宏; Hou Tuo-Hung; 國立交通大學電子工程學系及電子研究所
1-May-2007Effect of top electrode material on resistive switching properties of ZrO2 film memory devicesLin, Chih-Yang; Wu, Chen-Yu; Wu, Chung-Yi; Lee, Tzyh-Cheang; Yang, Fu-Liang; Hu, Chenming; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010前瞻非揮發性電阻式記憶體元件之製作與特性研究馮立偉; Feng, Li-Wei; 張俊彥; Chang, Chun-Yen; 電子研究所