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Issue DateTitleAuthor(s)
1997硒化鋅及其三元,四元化合物之光學性質研究江寶焜; Jiang, Bao-Kun; 褚德三; Chu, De-San; 電子物理系所
2000具有空隙釔鋇銅氧環形微波共振器之物理性質賴良星; Lian-Shing Lai; 郭義雄; 莊振益; Yih-Shun Gou; Jenh-Yih Juang; 電子物理系所
1996Study on the relationships between the single electron tunneling currents and tunneling voltages of YBa2Cu3O7-δ high temperature superconducting thin films by a Scanning Tunneling Microscope( STM)陳彥竹; Chen, Yan-Zhu; 溫增明; Wen, Zeng-Ming; 電子物理系所
1996以掃描穿隧式電子顯微鏡對釔鋇銅氧高溫超導薄膜單電子穿隧電流與穿隧電壓關係之研究陳彥竹; Chen, Yann-Jwu; 溫增明; Tzeng-Ming Uen; 電子物理系所
1997硒化鋅及其三元,四元化合物之光學性質研究江寶焜; Chiang, Pao-Kun; 褚德三; Der-San Chuu; 電子物理系所
1-Jun-2009Detecting non-Markovian plasmonic band gaps in quantum dots using electron transportChen, Yueh-Nan; Chen, Guang-Yin; Liao, Ying-Yen; Lambert, Neill; Nori, Franco; 物理研究所; Institute of Physics
2017以第一原理計算 氧化鋯/矽烯/氧化鋯之三明治結構羅廣鈺; 林炯源; 簡昭欣; Guang-Yu Lo; Lin, Chiung-Yuan; Chien, Chao-Hisn; 電子研究所
1-Sep-2009The influence of In composition on InGaAs-capped InAs/GaAs quantum-dot infrared photodetectorsLin, Wei-Hsun; Chao, Kuang-Ping; Tseng, Chi-Che; Mai, Shu-Cheng; Lin, Shih-Yen; Wu, Meng-Chyi; 光電工程學系; Department of Photonics
26-Jul-2010The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitorTrinh, H. D.; Chang, E. Y.; Wu, P. W.; Wong, Y. Y.; Chang, C. T.; Hsieh, Y. F.; Yu, C. C.; Nguyen, H. Q.; Lin, Y. C.; Lin, K. L.; Hudait, M. K.; 材料科學與工程學系; Department of Materials Science and Engineering