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Issue DateTitleAuthor(s)
1-Aug-2001The effect of oxygen on the interfacial reactions of Cu/TaNx/Si multilayersYin, KM; Chang, L; Chen, FR; Kai, JJ; 材料科學與工程學系; Department of Materials Science and Engineering
1-Nov-2002Improving the electrical integrity of Cu-CoSi2 contacted n(+)p junction diodes using nitrogen-incorporated Ta films as a diffusion barrierYang, WL; Wu, WF; You, HC; Ou, KL; Lei, TF; Chou, CP; 機械工程學系; 電子物理學系; Department of Mechanical Engineering; Department of Electrophysics
1-Jul-2006Investigation of electroless cobalt-phosphorous layer and its diffusion barrier properties of Pb-Sn solderLiang, Muh-Wang; Yen, Hui-Ting; Hsieh, Tsung-Eong; 材料科學與工程學系; Department of Materials Science and Engineering
1-Aug-2006Copper-airbridged low-noise GaAs PHEMT with Ti/WNx/Ti diffusion barrier for high-frequency applicationsLee, Cheng-Shih; Lien, Yi-Chung; Chang, Edward Yi; Chang, Huang-Choung; Chen, Szu-Houng; Lee, Ching-Ting; Chu, Li-Hsin; Chang, Shang-Wen; Hsieh, Yen-Chang; 材料科學與工程學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; D Link NCTU Joint Res Ctr
1-Dec-2004Electroless copper/nickel films deposited on AIN substratesLiang, MW; Hsieh, TE; Chen, CC; Hung, YT; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jun-2001Oxidation of Ta diffusion barrier layer for Cu metallization in thermal annealingYin, KM; Chang, L; Chen, FR; Kai, JJ; Chiang, CC; Chuang, G; Ding, PJ; Chin, B; Zhang, H; Chen, FS; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jan-2005Gold-free fully cu-metallized InGaP/GaAs heterojunction bipolar transistorChang, SW; Chang, EY; Biswas, D; Lee, CS; Chen, KS; Tseng, CW; Hsieh, TL; Wu, WC; 材料科學與工程學系; Department of Materials Science and Engineering
2005A gold-free fully copper-metallized InP heterojunction bipolar transistor using non-alloyed ohmic contact and platinum diffusion barrierChang, SW; Chang, EY; Lee, CS; Chen, KS; Tseng, CW; Tu, YY; Lee, CT; 材料科學與工程學系; Department of Materials Science and Engineering
1-Mar-1999Thermal stability of amorphous-like WNx/W bilayered diffusion barrier for chemical vapor deposited-tungsten/p(+)-Si contact systemChang, KM; Deng, IC; Yeh, TH; Lain, KD; Fu, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2005Novel multilayered Ti/TiN diffusion barrier for Al metallizationWu, WF; Tsai, KC; Chao, CG; Chen, JC; Ou, KL; 材料科學與工程學系; Department of Materials Science and Engineering