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Issue DateTitleAuthor(s)
21-May-2007Using double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devicesYang, F. M.; Chang, T. C.; Liu, P. T.; Yeh, P. H.; Chen, U. S.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
28-May-2007Nickel nanocrystals with HfO2 blocking oxide for nonvolatile memory applicationYang, F. M.; Chang, T. C.; Liu, P. T.; Chen, U. S.; Yeh, P. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
15-Dec-2011DNA double-strand breaks induced along the trajectory of particlesCho, I. C.; Niu, H.; Chen, C. H.; Yu, Y. C.; Hsu, C. H.; 奈米科技中心; 友訊交大聯合研發中心; Center for Nanoscience and Technology; D Link NCTU Joint Res Ctr
3-Dec-2007Nickel silicide nanocrystals embedded in SiO2 and HfO2 for nonvolatile memory applicationYang, F. M.; Chang, T. C.; Liu, Po-Tsun; Yeh, Y. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
15-Oct-2017Temperature dependence of the electric and spintronic transport properties of Germanium on glassChen, C. H.; Lee, C. W.; Yu, Y. C.; Lee, C. P.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
26-Mar-2007Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxideYang, F. M.; Chang, T. C.; Liu, P. T.; Yeh, P. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
15-Nov-2013A compact biological cell irradiation system with a Van de Graaff acceleratorCho, I. C.; Niu, H.; Chen, C. H.; Chou, W. T.; Yu, Y. C.; Hsu, C. H.; 奈米科技中心; 友訊交大聯合研發中心; Center for Nanoscience and Technology; D Link NCTU Joint Res Ctr
26-Mar-2007Memory characteristics of Co nanocrystal memory device with HfO(2) as blocking oxideYang, F. M.; Chang, T. C.; Liu, P. T.; Yeh, P. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display