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Issue DateTitleAuthor(s)
1-Jun-2005Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistorsHuang, SY; Chen, KM; Huang, GW; Liang, V; Tseng, HC; Hsu, TL; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2003Study of nickel silicide contact on Si/Si1-xGexYang, TH; Luo, GL; Chang, EY; Yang, TY; Tseng, HC; Chang, CY; 材料科學與工程學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; D Link NCTU Joint Res Ctr
20-Oct-1997Effects of isolation materials on facet formation for silicon selective epitaxial growthTseng, HC; Chang, CY; Pan, FM; Chen, JR; Chen, LJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-1996Characterization of boron silicide layer deposited by ultrahigh-vacuum chemical-vapor depositionTseng, HC; Pan, FM; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-1997Low temperature epitaxy of Si and Si1-xGex by utrahigh vacuum-chemical molecular epitaxyHuang, GW; Chen, LP; Chou, CT; Chen, KM; Tseng, HC; Tasi, WC; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2005Improvement in light-output efficiency of AlGaInP LEDs fabricated on stripe patterned epitaxyLee, YJ; Tseng, HC; Kuo, HC; Wang, SC; Chang, CW; Hsu, TC; Yang, YL; Hsieh, MH; Jou, MJ; Lee, BJ; 光電工程學系; Department of Photonics
2005Impact of hot carrier stress on RF power characteristics of MOSFETsHuang, SY; Chen, KM; Huang, GW; Yang, DY; Chang, CY; Liang, V; Tseng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2005Linearity and power characteristics of SiGeHBTs at high temperatures for RF applicationsChen, KM; Peng, AS; Huang, GW; Chen, HY; Huang, SY; Chang, CY; Tseng, HC; Hsu, TL; Liang, V; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-1997Effects of isolation oxides on undercut formation and electrical characteristics for silicon selective epitaxial growthTseng, HC; Chang, CY; Pan, FM; Chen, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2005Extraction of substrate parameters for RF MOSFETs based on four-port measurementWu, SD; Huang, GW; Chen, KM; Chang, CY; Tseng, HC; Hsu, TL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics