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Results 1-10 of 13 (Search time: 0.001 seconds).

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Issue DateTitleAuthor(s)
1-Jan-1998Optical and structural properties of epitaxially lifted-off GaAs filmsFan, JC; Lee, CP; Tsai, CM; Wang, SY; Tsang, JS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-1997Investigation of the indium atom interdiffusion on the growth of GaN/InGaN heterostructuresTsang, JS; Guo, JD; Chan, SH; Feng, MS; Chang, CY; 交大名義發表; National Chiao Tung University
15-Jul-1999Electrical properties of multiple high-dose Si implantation in p-GaNLai, WC; Yokoyama, M; Tsai, CC; Chang, CS; Guo, JD; Tsang, JS; Chan, SH; Chang, CY; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-Feb-1996The effect of barrier structure on the performance of double barrier quantum well infra-red photodetectorsTsai, KL; Lee, CP; Chen, PC; Tsang, JS; Tsai, CM; Fan, JC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-May-2001Activation of p-type GaN in a pure oxygen ambientWen, TC; Lee, SC; Lee, WI; Chen, TY; Chan, SH; Tsang, JS; 電子物理學系; 友訊交大聯合研發中心; Department of Electrophysics; D Link NCTU Joint Res Ctr
1-Nov-1999Electrical properties of the Si implantation in Mg doped p-GaNLai, WC; Yokoyama, M; Tsai, CC; Chang, CS; Guo, JD; Tsang, JS; Chan, SH; 光電工程學系; Department of Photonics
1-Jan-1998Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologiesChuang, HF; Lee, CP; Tsai, CM; Liu, DC; Tsang, JS; Fan, JC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1996Thermal reactions of Pd/AlxGa1-xAs contactsChuang, HF; Lee, CP; Tsang, JS; Fan, JC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Jan-1996Compositional disordering of InGaAs/GaAs heterostructures by low-temperature-grown GaAs layersTsang, JS; Lee, CP; Lee, SH; Tsai, KL; Tsai, CM; Fan, JC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
24-Jun-1996The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layerLin, CF; Chi, GC; Feng, MS; Guo, JD; Tsang, JS; Hong, JMH; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics