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Issue DateTitleAuthor(s)
1-Jun-2010Parameter extraction in polysilicon nanowire MOSFETs using new double integration-based procedureOrtiz-Conde, A.; Rey, A. D. Latorre; Liu, W.; Chen, W. -C.; Lin, H. -C.; Liou, J. J.; Muci, J.; Garcia-Sanchez, F. J.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2014Device Simulation of P-InAlN-Gate AlGaN/GaN High Electron Mobility TransistorShrestha, Niraj Man; Lin, Yueh-Chin; Chang, Han-Tung; Li, Yiming; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
201728奈米近臨界電壓使用12顆電晶體搭配短反或閘型匹配線之管線化的三態內容可定址記憶體陳俊丞; 莊景德; 黃威; Chen, Jyun-Cheng; Chuang, Ching-Te; Hwang, Wei; 電子研究所
2013利用氧化鋁/氧化氮堆疊當介電層的方式製作出可改善起始電壓穩定性的增強型氮化鎵金屬-絕緣體-半導體高電子遷移率電晶體宋奕佐; Song, Yi Zuo; 張翼; 馬哲申; Chang, Yi; Maa, Jer Shen; 照明與能源光電研究所
2014具梯形通道塊材鰭式場效應電晶體元件及其電路特性擾動之研究黃文聰; Huang, Wen-Tsung; 李義明; Li, Yiming; 電信工程研究所
1-May-2014Fast Transistor Threshold Voltage Measurement Method for High-Speed, High-Accuracy Advanced Process CharacterizationLuo, Tseng-Chin; Chao, Mango C. -T.; Tseng, Huan-Chi; Goto, Masaharu; Fisher, Philip A.; Chang, Yuan-Yao; Chang, Chi-Min; Takao, Takayuki; Iwasaki, Katsuhito; Lee, Cheng Mao; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2014Influence of electrode configuration on the heat transfer performance of a LED heat sourceChen, Ing Youn; Chen, Chien-Jen; Wang, Chi-Chuan; 機械工程學系; Department of Mechanical Engineering
2015使用閂鎖比較器快速量測臨界電壓變異數之 WAT測試電路李高騏; Lee, Kao-Chi; 趙家佐; Chao, Chia-Tso; 電子工程學系 電子研究所
2015零時和時間依賴引致臨界電壓改變量分布在奈米線結構無接面電晶體郭晉榕; Kuo, Chin-Jung; 汪大暉; Wang, Ta-hui; 電子工程學系 電子研究所
1-Jan-2010CMOS voltage reference based on threshold voltage and thermal voltageLo, Tien-Yu; Hung, Chung-Chih; Ismail, Mohammed; 電信工程研究所; Institute of Communications Engineering