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Issue DateTitleAuthor(s)
18-May-2018Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devicesLiao, P. H.; Peng, K. P.; Lin, H. C.; George, T.; Li, P. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
20-Mar-2004DC-12-GHz 10-dB gain shunt-series shunt-shunt wideband amplifiers by commercially available 0.35 mu M SiGe HBT technologyMeng, CC; Wu, TH; Huang, GW; 電信工程研究所; Institute of Communications Engineering
2013P型鍺與N型矽晶圓接合介面型態與電性研究林敬富; Lin, Ching-Fu; 吳耀銓; Wu, Yew-Chung; 材料科學與工程學系所
1-Sep-2008Comparison of wideband Gilbert micromixers using SiGe HBT and GaInP/GaAs HBT technologiesSyu, Jin-Siang; Meng, Chinchun; Wu, Chih-Kai; Huang, Guo-Wei; 電信工程研究所; Institute of Communications Engineering
1-Sep-2003Study of nickel silicide contact on Si/Si1-xGexYang, TH; Luo, GL; Chang, EY; Yang, TY; Tseng, HC; Chang, CY; 材料科學與工程學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; D Link NCTU Joint Res Ctr
1-Mar-2003A novel SiGe raised source/drain polycrystalline silicon thin-film transistor with improved on-current and larger breakdown voltagePeng, DZ; Chang, TC; Liu, CF; Yeh, PH; Liu, PT; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-May-2003Growth of high-quality Ge epitaxial layers on Si(100)Luo, GL; Yang, TH; Chang, EY; Chang, CY; Chao, KA; 材料科學與工程學系; 電子工程學系及電子研究所; 電子與資訊研究中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Microelectronics and Information Systems Research Center
1-Dec-2002La2O3/Si0.3Ge0.7 p-MOSFETs with high hole mobility and good device characteristicsHuang, CH; Chen, SB; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2007SiGe HBT's small-signal Pi modelingYang, Tian-Ren; Tsai, Julius Ming-Lin; Ho, Chih-Long; Hu, Robert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-200915 GHz High-Isolation Sub-Harmonic Mixer With Delay CompensationSyu, Jin-Siang; Meng, Chinchun; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics