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Results 1-7 of 7 (Search time: 0.002 seconds).

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Issue DateTitleAuthor(s)
1-Apr-2014Simulation study on electrical characteristic of AlGaN/GaN high electron mobility transistors with AlN spacer layerShrestha, Niraj Man; Li, Yiming; Chang, Edward Yi; 材料科學與工程學系; 資訊工程學系; Department of Materials Science and Engineering; Department of Computer Science
1-Aug-2015A novel AlGaN/GaN multiple aperture vertical high electron mobility transistor with silicon oxide current blocking layerShrestha, Niraj Man; Wang, Yuen Yee; Li, Yiming; Chang, Edward Yi; 材料科學與工程學系; 資訊工程學系; Department of Materials Science and Engineering; Department of Computer Science
1-Apr-2019Electrical Characteristic of AlGaN/GaN High-Electron-Mobility Transistors With Recess Gate StructureShrestha, Niraj Man; Li, Yiming; Suemitsu, Tetsuya; Samukawa, Seiji; 交大名義發表; 電機工程學系; National Chiao Tung University; Department of Electrical and Computer Engineering
Mar-2016Optimal design of the multiple-apertures-GaN-based vertical HEMTs with SiO2 current blocking layerShrestha, Niraj Man; Li, Yiming; Chang, Edward Yi; 材料科學與工程學系; 資訊工程學系; Department of Materials Science and Engineering; Department of Computer Science
1-Jan-2014Device Simulation of P-InAlN-Gate AlGaN/GaN High Electron Mobility TransistorShrestha, Niraj Man; Lin, Yueh-Chin; Chang, Han-Tung; Li, Yiming; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
2016應用於高功率電子之高電子遷移率氮化鎵電晶體其設計、模擬與開發 之研究尼洛齊; 張翼; Shrestha, Niraj Man; Chang, Edward Yi; 材料科學與工程學系所
1-Jan-2020Low resistive InGaN film grown by metalorganic chemical vapor depositionShrestha, Niraj Man; Chauhan, Prerna; Wong, Yuen-Yee; Li, Yiming; Samukawa, Seiji; Chang, Edward Yi; 交大名義發表; 材料科學與工程學系; 電機工程學系; National Chiao Tung University; Department of Materials Science and Engineering; Department of Electrical and Computer Engineering