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Issue DateTitleAuthor(s)
2013藉由高介電質材料做表面鈍化及閘極絕緣層改善氮化鋁鎵/氮化鎵之高電子遷移率電晶體元件特性廖仁廷; Liao, Jen-Ting; 張翼; 林萬里; 影像與生醫光電研究所
1-Dec-2018AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As OxidantsWang, Huan-Chung; Hsieh, Ting-En; Lin, Yueh-Chin; Luc, Quang Ho; Liu, Shih-Chien; Wu, Chia-Hsun; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2009利用閘極掘入方式製作增強型高截止電壓氮化鋁鎵/氮化鎵/氮化鋁鎵金屬-絕緣體-半導體高電子遷移率電晶體之研究陳奕仲; Chen, Yi-Chung; 張翼; Chang, Yi Edward; 材料科學與工程學系
1-Aug-2017Simulation Model Development for Packaged Cascode Gallium Nitride Field-Effect TransistorsWu, Chih-Chiang; Jeng, Shyr-Long; 機械工程學系; Department of Mechanical Engineering
2015電源功率元件中減少閘極漏電流及崩潰電壓的改善方式研究賴定豪; Lai, Ting-Hao; 張翼; Chang, Edward Yi; 工學院半導體材料與製程設備學程
1-Jan-2018Investigation of Degradation Phenomena in GaN-on-Si Power MIS-HEMTs under Source Current and Drain Bias StressesYang, Chih-Yi; Wu, Tian-Li; Hsieh, Tin-En; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-Aug-2019Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 m Omega center dot cm(2) Specific On-Resistance for Power Device ApplicationsWu, Chia-Hsun; Chen, Jian-You; Han, Ping-Cheng; Lee, Ming-Wen; Yang, Kun-Sheng; Wang, Huan-Chung; Chang, Po-Chun; Luc, Quang Ho; Lin, Yueh-Chin; Dee, Chang-Fu; Hamzah, Azrul Azlan; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-Aug-2017Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power ApplicationLin, Yueh Chin; Huang, Yu Xiang; Huang, Gung Ning; Wu, Chia Hsun; Yao, Jing Neng; Chu, Chung Ming; Chang, Shane; Hsu, Chia Chieh; Lee, Jin Hwa; Kakushima, Kuniyuki; Tsutsui, Kazuo; Iwai, Hiroshi; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子物理學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
2016經電荷調變之能帶對氮化鎵金屬絕緣層半導體高電子遷移率電晶體元件特性影響之研究黃崇愷; 張翼; 施敏; Huang, Chung-Kai; Chang, Edward Yi; Sze, Simon Min; 電子研究所
1-Jan-2018Normally-OFF GaN MIS-HEMT With F- Doped Gate Insulator Using Standard Ion ImplantationWu, Chia-Hsun; Han, Ping-Cheng; Quang Ho Luc; Hsu, Ching-Yi; Hsieh, Ting-En; Wang, Huan-Chung; Lin, Yen-Ku; Chang, Po-Chun; Lin, Yueh-Chin; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology