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Issue DateTitleAuthor(s)
21-May-2007Using double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devicesYang, F. M.; Chang, T. C.; Liu, P. T.; Yeh, P. H.; Chen, U. S.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
2-Mar-2016Antisite disorder driven spontaneous exchange bias effect in La2-xSrxCoMnO6 (0 <= x <= 1)Murthy, J. Krishna; Chandrasekhar, K. D.; Wu, H. C.; Yang, H. D.; Lin, J. Y.; Venimadhav, A.; 物理研究所; Institute of Physics
1-Jan-2009Phase separation and persistent magnetic memory effect in La(0.625)Ca(0.375)MnO(3) and La(0.375)Pr(0.25)Ca(0.375)MnO(3) filmsTsai, Y. T.; Chang, W. J.; Hsieh, C. C.; Luo, C. W.; Wu, K. H.; Uen, T. M.; Juang, J. Y.; Lin, J. Y.; 電子物理學系; 物理研究所; Department of Electrophysics; Institute of Physics
26-Jan-2009Bonding anisotropy in multiferroic TbMnO(3) probed by polarization dependent x-ray absorption spectroscopyChen, J. M.; Lee, J. M.; Chen, C. K.; Chou, T. L.; Lu, K. T.; Haw, S. C.; Liang, K. S.; Chen, C. T.; Jeng, H. T.; Huang, S. W.; Yang, T. J.; Shen, C. C.; Liu, R. S.; Lin, J. Y.; Hu, Z.; 電子物理學系; 物理研究所; Department of Electrophysics; Institute of Physics
26-Mar-2007Memory characteristics of Co nanocrystal memory device with HfO(2) as blocking oxideYang, F. M.; Chang, T. C.; Liu, P. T.; Yeh, P. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
1-Oct-2014Metamagnetic behaviour and effect of field cooling on sharp magnetization jumps in multiferroic Y2CoMnO6Murthy, J. Krishna; Chandrasekhar, K. D.; Wu, H. C.; Yang, H. D.; Lin, J. Y.; Venimadhav, A.; 物理研究所; Institute of Physics
15-Oct-2011Effects of rapid thermal annealing on the structural properties of TiO(2) nanotubesLin, J. Y.; Chou, Y. T.; Shen, J. L.; Yang, M. D.; Wu, C. H.; Chi, G. C.; Chou, W. C.; Ko, C. H.; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
26-Dec-2011Distribution of electronic reconstruction at the n-type LaAlO(3)/SrTiO(3) interface revealed by hard x-ray photoemission spectroscopyChu, Y. Y.; Liao, Y. F.; Tra, V. T.; Yang, J. C.; Liu, W. Z.; Chu, Y. H.; Lin, J. Y.; Huang, J. H.; Weinen, J.; Agrestini, S.; Tsuei, K. -D.; Huang, D. J.; 材料科學與工程學系; 物理研究所; Department of Materials Science and Engineering; Institute of Physics
21-Aug-2006Effects of strain on the electronic structures and T-C's of the La0.67Ca0.33MnO3 and La0.8Ba0.2MnO3 thin films deposited on SrTiO3Chou, Hsiung; Tsai, M. -H.; Yuan, F. P.; Hsu, S. K.; Wu, C. B.; Lin, J. Y.; Tsai, C. I.; Tang, Y. -H.; 物理研究所; Institute of Physics
28-May-2007Nickel nanocrystals with HfO2 blocking oxide for nonvolatile memory applicationYang, F. M.; Chang, T. C.; Liu, P. T.; Chen, U. S.; Yeh, P. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display