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Issue DateTitleAuthor(s)
2014以氧化鑭/氧化鉿堆疊式氧化層作為高功率氮化鎵高電子遷移率電晶體之閘極氧化層研究藍偉誠; Lan, Wei-Cheng; 張翼; 馬哲申; Chang, Edward-Yi; Maa, Jer-Shen; 光電系統研究所
20141奈米等效厚度之氧化鑭與氧化鉿複合氧化物材料在砷化銦鎵金氧半元件之研究侯姿清; Hou, Tzu-Ching; 張翼; 馬哲申; Chang, Edward-Yi; Maa, Jer-shen; 光電系統研究所
1999高介電質材料氧化鑭之研究王俊彬; J. B. Wang; 荊鳳德; 蔡 中; Albert Chin; C. Tsai; 電子研究所
2015以氧化鑭/二氧化矽堆疊式氧化層作為高功率氮化鎵高電子遷移率電晶體之閘極氧化層之研究林岱葦; Lin, Tai-Wei; 張翼; 馬哲申; Chang, Edward-Yi; Maa, Jer-shen; 光電系統研究所
1-Sep-2013Gate-first n-MOSFET with a sub-0.6-nm EOT gate stackCheng, C. H.; Chou, K. I.; Chin, A.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2013Electrical Characterization and Materials Stability Analysis of La2O3/HfO2 Composite Oxides on n-In0.53Ga0.47As MOS Capacitors With Different Annealing TemperaturesLin, Yueh Chin; Trinh, Hai Dang; Chuang, Ting Wei; Iwai, Hiroshi; Kakushima, Kuniyuki; Ahmet, Parhat; Lin, Chun Hsiung; Diaz, Carlos H.; Chang, Hui Chen; Jang, Simon M.; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Dec-2002La2O3/Si0.3Ge0.7 p-MOSFETs with high hole mobility and good device characteristicsHuang, CH; Chen, SB; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2003Fully silicided NiSi gate on La2O3 MOSFETsLin, CY; Ma, MW; Chin, A; Yeo, YC; Zhu, CX; Li, MF; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2020Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power ApplicationsHuang, Kuan Ning; Lin, Yueh-Chin; Lin, Jia-Ching; Hsu, Chia Chieh; Lee, Jin Hwa; Wu, Chia-Hsun; Yao, Jing Neng; Hsu, Heng-Tung; Nagarajan, Venkatesan; Kakushima, Kuniyuki; Tsutsui, Kazuo; Iwai, Hiroshi; Chien, Chao Hsin; Chang, Edward Yi; 材料科學與工程學系; 照明與能源光電研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Lighting and Energy Photonics; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
2003氧化鑭, 氧化鐠及氧化鉿介電層特性之研究林盈彰; Ying-Chang Lin; 黃調元; 簡昭欣; Tiao-Yuan Huang; Chao-Hsin Chien; 電子研究所