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Issue DateTitleAuthor(s)
1-May-2011Design to suppress return-back leakage current of charge pump circuit in low-voltage CMOS processWeng, Yi-Hsin; Tsai, Hui-Wen; Ker, Ming-Dou; 電機學院; College of Electrical and Computer Engineering
1-Sep-2009Design of Analog Output Buffer With Level Shifting Function on Glass Substrate for Panel ApplicationWang, Tzu-Ming; Ker, Ming-Dou; Chen, Sao-Chi; 電機學院; College of Electrical and Computer Engineering
1-Sep-2007On-chip ESD protection design for automotive vacuum-fluorescent-display (VFD) driver IC to sustain high ESD stressKer, Ming-Dou; Chang, Wei-Jen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010可相容高工作電壓且具有負載適應性之抑制癲癇發作電流刺激器設計李易儒; Li, Yi-Ju; 柯明道; Ker, Ming-Dou; 電子研究所
2013Ultra-Low-Leakage Power-Rail ESD Clamp Circuit in a 65-nm CMOS TechnologyAltolaguirre, Federico A.; Ker, Ming-Dou; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011Impact of Shielding Line on CDM ESD Robustness of Core Circuits in a 65-nm CMOS ProcessKer, Ming-Dou; Lin, Chun-Yu; Chang, Tang-Long; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008CDM ESD Protection in CMOS Integrated CircuitsKer, Ming-Dou; Hsiao, Yuan-Wen; 電機學院; College of Electrical and Computer Engineering
2014ESD Protection Design for Wideband RF Applications in 65-nm CMOS ProcessChu, Li-Wei; Lin, Chun-Yu; Ker, Ming-Dou; Song, Ming-Hsiang; Tseng, Jen-Chou; Jou, Chewn-Pu; Tsai, Ming-Hsien; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006Investigation on RF characteristics of stacked P-I-N polysilicon diodes for ESD protection design in 0.18-mu m CMOS technologyShiu, Yu-Da; Chuang, Che-Hao; Ker, Ming-Dou; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2016Design of High-Voltage-Tolerant Level Shifter in Low Voltage CMOS Process for Neuro StimulatorLuo, Zhicong; Ker, Ming-Dou; 生醫電子轉譯研究中心; Biomedical Electronics Translational Research Center