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Issue DateTitleAuthor(s)
1-Nov-2010Improvement on the noise performance of InAs-based HEMTs with gate sinking technologyHsu, Heng-Tung; Kuo, Chien-I; Chang, Edward Y.; Kuo, Fang-Yao; 材料科學與工程學系; Department of Materials Science and Engineering
1-Apr-2008RF and logic performance improvement of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite-channel HEMT using gate-sinking technologyKuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi; Chang, Chia-Yuan; Miyamoto, Yasuyuki; Datta, Suman; Radosavljevic, Marko; Huang, Guo-Wei; Lee, Ching-Ting; 材料科學與工程學系; Department of Materials Science and Engineering
2008Characteristics of single-mode InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs emitting in the 990 nm rangeYang, Hung-Pin D.; Hsu, I. -Chen; Lai, Fang-I.; Lin, Gray; Hsiao, Ru-Shang; Kuo, Hao-Chung; Chi, Jim Y.; 交大名義發表; National Chiao Tung University
1-Feb-2006Effect of annealing on low-threshold-current large-wavelength InGaAs quantum well vertical-cavity laserChen, IL; Hsu, WC; Kuo, HC; Sung, CP; Chiou, CH; Wang, JM; Chang, YH; Yu, HC; Lee, TD; 光電工程學系; Department of Photonics
1-Jan-2006Growth of highly strained RnGaAs quantum wells by metalorganic chemical vapor deposition with application to vertical-cavity surface-emitting laserChen, IL; Hsu, WC; Lee, TD; Kuo, HC; Su, KH; Chiou, CH; Wang, JM; Chang, YH; 光電工程學系; Department of Photonics
1-Oct-2005Low-threshold-current-density, long-wavelength, highly strained InGaAs laser grown by metalorganic chemical vapor depositionChen, IL; Hsu, WC; Kuo, HC; Yu, HC; Sung, CP; Lu, CM; Chiou, CH; Wang, JM; Chang, YH; Lee, TD; Wang, JS; 光電工程學系; Department of Photonics
2015使用氮化鋁及閘極介電質成長後電漿處理法改善三五族砷化銦鎵場效電晶體元件特性之研究鄭守博; Cheng, Shou-Po; 黃國威; 黃調元; Huang, Guo-Wei; Huang, Tiao-Yuan; 電子工程學系 電子研究所
1-Jan-2013In0.5Ga0.5As-Based Metal-Oxide-Semiconductor Capacitor on GaAs Substrate Using Metal-Organic Chemical Vapor DepositionNguyen, H. Q.; Trinh, H. D.; Chang, E. Y.; Lee, C. T.; Wang, Shin Yuan; Yu, H. W.; Hsu, C. H.; Nguyen, C. L.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2001砷化銦鎵與砷化鎵量子點應變鬆弛的特性研究陳振芳; CHEN JENN-FANG; 國立交通大學電子物理學系
2015應用於邏輯線路之低耗能三閘極砷化銦鎵變晶性高電子遷移率電晶體之研究詹京叡; Chan, Jing-Ruey; 張翼; 馬哲申; Chang, Edward-Yi; Maa, Jer-Shen; 照明與能源光電研究所