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Issue DateTitleAuthor(s)
1-Nov-2010Improvement on the noise performance of InAs-based HEMTs with gate sinking technologyHsu, Heng-Tung; Kuo, Chien-I; Chang, Edward Y.; Kuo, Fang-Yao; 材料科學與工程學系; Department of Materials Science and Engineering
1-Dec-2005Ion-channeling studies of InAs/GaAs quantum dotsNiu, H; Chen, CH; Wang, HY; Wu, SC; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2008Ion beam studies of InAs/GaAs quantum dots after annealingNiu, H.; Chen, C. H.; Wang, H. Y.; Wu, S. C.; Lee, C. P.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2015應用於邏輯線路之低耗能三閘極砷化銦高電子遷移率電晶體之研究許祥華; Hsu, Hisang-Hua; 張翼; 林萬里; Chang, Edward-Yi; Lin, Wallace; 影像與生醫光電研究所
1-Apr-2008RF and logic performance improvement of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite-channel HEMT using gate-sinking technologyKuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi; Chang, Chia-Yuan; Miyamoto, Yasuyuki; Datta, Suman; Radosavljevic, Marko; Huang, Guo-Wei; Lee, Ching-Ting; 材料科學與工程學系; Department of Materials Science and Engineering
2010超低功率之高頻砷化銦通道高電子遷移率電晶體之研究張家源; Chang, Chia-Yuan; 張翼; 材料科學與工程學系
15-Jan-2010Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layersShu, G. W.; Wang, J. S.; Shen, J. L.; Hsiao, R. S.; Chen, J. F.; Lin, T. Y.; Wu, C. H.; Huang, Y. H.; Yang, T. N.; 電子物理學系; Department of Electrophysics
2015探討室溫下InAs量子點在GaAs蕭特基二極體中的特性並利用電路學上波德圖的方式來做分析廖軒逸; Liao, hsuan-I; 陳振芳; Chen, Jenn-Fang; 電子物理系所
2013建立電路模型探討InAs量子點累積過量電子對蕭基二極體電性之影響潘盛祥; Pan, Sheng-Shiang; 陳振芳; Chen, Jenn-Fang; 電子物理系所
15-Aug-2011Improving the photoluminescence properties of self-assembled InAs surface quantum dots by incorporation of antimonyChiang, C. H.; Wu, Y. H.; Hsieh, M. C.; Yang, C. H.; Wang, J. F.; Chen, Ross C. C.; Chang, L.; Chen, J. F.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics