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Results 1-10 of 27 (Search time: 0.005 seconds).

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Issue DateTitleAuthor(s)
1998以HVPE成長之氮化鎵單晶基板的攙雜研究施敏; SZE SIMON MIN; 交通大學電子工程系
1-Nov-2008A Novel Technique for Growing Crack-Free GaN Thick Film by Hydride Vapor Phase EpitaxyHuang, Hsin-Hsiung; Chen, Kuei-Ming; Tu, Li-Wei; Chu, Ting-Li; Wu, Pei-Lun; Yu, Hung-Wei; Chiang, Chen-Hao; Lee, Wei-I; 電子物理學系; Department of Electrophysics
2015利用氫化物氣相磊晶法在物理氣相沉積氮化鋁的緩衝層上成長氮化鎵厚膜之研究孫晟淵; Sun, Chen-Yuan; 李威儀; Lee, Wei-I; 電子物理系所
2006用氫化物氣相磊晶法成長氮化鎵厚膜之應力分析王溫壬; Wen-Jen Wang; 李威儀; Wei-I Lee; 電子物理系所
2006以氫化物氣相磊晶法成長氮化鎵厚膜之陰極螢光特性分析宋源根; Yuan-Ken Sung; 李威儀; Wei-I Lee; 電子物理系所
2017透過氫化物氣相磊晶法探討利用多變化 金屬合金催化劑成長氮化鎵奈米線楊智強; 周苡嘉; Yang, Chih-Chaing; Chou, Yi-Chia; 電子物理系所
1-May-2009Effective reduction of bowing in free-standing GaN by N-face regrowth with hydride vapor-phase epitaxyChen, Kuei-Ming; Huang, Hsin-Hsiung; Kuo, Yi-Lin; Wu, Pei-Lun; Chu, Ting-Li; Yu, Hung-Wei; Lee, Wei-I; 電子物理學系; Department of Electrophysics
2011氮化鎵基板的開發與同質磊晶研究陳奎銘; Chen, Kuei-Ming; 李威儀; Lee, Wei-I; 電子物理系所
1-Nov-2015Numerical Simulation and Experimental Analysis of Current Spreading Length in Nitride-Based Light-Emitting Diodes Prepared on 10-mu m-Thick n-GaN TemplateChen, Yu-An; Chang, Chia-Wei; Kuo, Cheng-Huang; 照明與能源光電研究所; Institute of Lighting and Energy Photonics
2008氮化鎵厚膜翹曲效應分析及其改善之研究楊定儒; Yang, Din-Ru; 李威儀; Lee, Wei-I; 電子物理系所