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Issue DateTitleAuthor(s)
2015以氧化鑭/二氧化矽堆疊式氧化層作為高功率氮化鎵高電子遷移率電晶體之閘極氧化層之研究林岱葦; Lin, Tai-Wei; 張翼; 馬哲申; Chang, Edward-Yi; Maa, Jer-shen; 光電系統研究所
1-May-2018Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applicationsChou, Po-Chien; Hsieh, Ting-En; Cheng, Stone; del Alamo, Jesus A.; Chang, Edward Yi; 機械工程學系; 材料科學與工程學系; Department of Mechanical Engineering; Department of Materials Science and Engineering
1-Feb-2017Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching ApplicationsChou, Po-Chien; Chen, Szu-Hao; Hsieh, Ting-En; Cheng, Stone; del Alamo, Jesus A.; Chang, Edward Yi; 機械工程學系; 材料科學與工程學系; Department of Mechanical Engineering; Department of Materials Science and Engineering
1-Feb-2020Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power ApplicationsHuang, Kuan Ning; Lin, Yueh-Chin; Lin, Jia-Ching; Hsu, Chia Chieh; Lee, Jin Hwa; Wu, Chia-Hsun; Yao, Jing Neng; Hsu, Heng-Tung; Nagarajan, Venkatesan; Kakushima, Kuniyuki; Tsutsui, Kazuo; Iwai, Hiroshi; Chien, Chao Hsin; Chang, Edward Yi; 材料科學與工程學系; 照明與能源光電研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Lighting and Energy Photonics; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology