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Issue DateTitleAuthor(s)
2009Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma TreatmentLin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2008Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reductionLin, Chao-Cheng; Chang, Ting-; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2008Passivation effect of poly-Si thin-film transistors with fluorine-ion-implanted spacersChen, Wei-Ren; Chang, Ting-Chang; Liu, Po-Tsun; Wu, Chen Jung; Tu, Chun-Hao; Sze, S. M.; Chang, Chun-Yen; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
31-Mar-2011Influence of hydrogen plasma treatment on charge storage characteristics in high density tungsten nanocrystal nonvolatile memoryChen, Shih-Cheng; Chang, Ting-Chang; Chen, Wei-Ren; Lo, Yuan-Chun; Wu, Kai-Ting; Sze, S. M.; Chen, Jason; Liao, I. H.; Yeh (Huang), Fon-Shan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
26-Nov-2007Formation and nonvolatile memory effect of nickel-oxygen-silicon nanoparticlesChen, Wei-Ren; Chang, Ting-Chang; Yeh, Jui-Lung; Sze, Simon M.; Chang, Chun-Yen; Chen, Uei-Shin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
14-Apr-2008Reliability characteristics of NiSi nanocrystals embedded in oxide and nitride layers for nonvolatile memory applicationChen, Wei-Ren; Chang, Ting-Chang; Yeh, Jui-Lung; Sze, S. M.; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Formation of germanium nanocrystals embedded in a silicon-oxygen-nitride layerTu, Chun-Hao; Chang, Ting-Chang; Liu, Po-Tsun; Weng, Chi-Feng; Liu, Hsin-Chou; Chang, Li-Ting; Lee, Sheng-Kai; Chen, Wei-Ren; Sze, Simon M.; Chang, Chun-Yen; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
2009Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer StructureLin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Feng, Li-Wen; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-2008Formation and nonvolatile memory characteristics of multilayer nickel-silicide NCs embedded in nitride layerChen, Wei-Ren; Chang, Ting-Chang; Yeh, Jui-Lung; Sze, S. M.; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
3-Sep-2007Formation of Ge nanocrystals using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 film for nonvolatile memory applicationChen, Wei-Ren; Chang, Ting-Chang; Hsieh, Yen-Ting; Sze, Simon M.; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics