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Issue DateTitleAuthor(s)
9-Jul-2007n(+)-doped-layer-free microcrystalline silicon thin film transistors fabricated with the CuMg as source/drain metalWang, M. C.; Chang, T. C.; Liu, Po-Tsun; Xiao, R. W.; Lin, L. F.; Li, Y. Y.; Yeh, F. S.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
2007Schottky barrier height for the photo leakage current transformation of a-Si : H TFTsWang, M. C.; Chang, T. C.; Liu, Po-Tsun; Li, Y. Y.; Xiao, R. W.; Lin, L. F.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
2007Analysis of parasitic resistance and channel sheet conductance of a-Si : H TFT under mechanical bendingWang, M. C.; Chang, T. C.; Liu, Po-Tsun; Tsao, S. W.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
7-May-2007Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistorWang, M. C.; Chang, T. C.; Liu, Po-Tsun; Tsao, S. W.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
21-May-2007Using double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devicesYang, F. M.; Chang, T. C.; Liu, P. T.; Yeh, P. H.; Chen, U. S.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
1-Jan-2014High-density nano-pillar SiOx-based resistive switching memory using nano-sphere lithography to fabricate a one diode - one resistor (1D-1R) architectureChang, Y. F.; Ji, L.; Chen, Y. C.; Zhou, F.; Tsai, T. M.; Chang, K. C.; Chen, M. C.; Chang, T. C.; Fowler, B.; Yu, E. T.; Lee, J. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
3-Dec-2007Source-drain barrier height engineering for suppressing the a-Si : H TFTs photo leakage currentWang, M. C.; Chang, T. C.; Liu, P. T.; Li, Y. Y.; Huang, F. S.; Mei, Y. J.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
10-Feb-2007Metal nanocrystals as charge storage nodes for nonvolatile memory devicesYeh, P. H.; Chen, L. J.; Liu, P. T.; Wang, D. Y.; Chang, T. C.; 光電工程學系; Department of Photonics
7-Jan-2008Tungsten oxide/tungsten nanocrystals for nonvolatile memory devicesChen, C. H.; Chang, T. C.; Liao, I. H.; Xi, P. B.; Hsieh, Joe; Chen, Jason; Huang, Tensor; Sze, S. M.; Chen, U. S.; Chen, J. R.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
26-Mar-2007Memory characteristics of Co nanocrystal memory device with HfO(2) as blocking oxideYang, F. M.; Chang, T. C.; Liu, P. T.; Yeh, P. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display