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Issue DateTitleAuthor(s)
2002A high power enhancement-mode pseudomorphic high electron mobility transistor with 2.5 W output power and 64.5 % efficiency at 3 VChen, SH; Chang, EY; Lin, YC; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jun-2004Low-noise metamorphic HEMTs with reflowed 0.1 mu m T-gateLien, YC; Chang, EY; Chang, HC; Chu, LH; Huang, GW; Lee, HM; Lee, CS; Chen, SH; Shen, PT; Chang, CY; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Jul-2004Composite-channel metamorphic high electron mobility transistor for low-noise and high-linearity applicationsChang, EY; Lin, YC; Chen, GJ; Lee, HM; Huang, GW; Biswas, D; Chang, CY; 材料科學與工程學系; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
17-Jun-2002A study of subbands in AlGaN/GaN high-electron-mobility transistor structures using low-temperature photoluminescence spectroscopyFang, CY; Lin, CF; Chang, EY; Feng, MS; 材料科學與工程學系; 光電工程學系; Department of Materials Science and Engineering; Department of Photonics
1-Aug-2000Highly selective GaAs/Al0.2Ga0.8As wet etch process for the gate recess of low-voltage-power pseudomorphic high-electron-mobility transistorChang, HC; Chang, EY; Chung, CC; Kuo, CT; 材料科學與工程學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; D Link NCTU Joint Res Ctr
1-Sep-2003Study of nickel silicide contact on Si/Si1-xGexYang, TH; Luo, GL; Chang, EY; Yang, TY; Tseng, HC; Chang, CY; 材料科學與工程學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; D Link NCTU Joint Res Ctr
15-Jan-2002Low-voltage-operation high-power-density AlGaAs/InGaAs enhancement-mode pseudomorphic high-electron-mobility transistor for personal handy-phone handset applicationChen, SH; Chang, L; Chang, EY; Chang, CY; 材料科學與工程學系; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
15-Oct-2000A 1.2-V operation power pseudomorphic high electron mobility transistor for personal handy phone handset applicationChang, EY; Lee, DH; Chen, SH; 材料科學與工程學系; Department of Materials Science and Engineering
15-May-2003Growth of high-quality Ge epitaxial layers on Si(100)Luo, GL; Yang, TH; Chang, EY; Chang, CY; Chao, KA; 材料科學與工程學系; 電子工程學系及電子研究所; 電子與資訊研究中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Microelectronics and Information Systems Research Center
15-Dec-2002New nanometer T-gate fabricated by thermally reflowed resist techniqueLee, HM; Chang, EY; Chen, SH; Chang, CY; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr