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Issue DateTitleAuthor(s)
2013藉由氮化鋁層間鈍化層之插入改善氮化矽氮化鋁鎵/氮化鎵金屬絕緣半導體高電子遷移率電晶體之漏電流及電流潰散效應賴俊霖; Lai, Chung-Ling; 張翼; 馬哲申; Chang, Yi; Ma,Jer-Shen; 照明與能源光電研究所
1-Dec-2013Improving the stability and reproducibility of the carbon nanotube gas ionization sensor by Co-Ti/Ti co-deposited catalyst layerChang, Chia-Tsung; Huang, Chun-Yu; Li, Yu-Ren; Cheng, Huang-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Mar-2016Optimal design of the multiple-apertures-GaN-based vertical HEMTs with SiO2 current blocking layerShrestha, Niraj Man; Li, Yiming; Chang, Edward Yi; 材料科學與工程學系; 資訊工程學系; Department of Materials Science and Engineering; Department of Computer Science
1-May-2020Design Strategies for Mesa-Type GaN-Based Schottky Barrier Diodes for Obtaining High Breakdown Voltage and Low Leakage CurrentJia, Xingyu; Chen, Sung-Wen Huang; Liu, Yajin; Hou, Xu; Zhang, Yonghui; Zhang, Zi-Hui; Kuo, Hao-Chung; 光電工程學系; Department of Photonics
1-Jun-2013Effect of arrangement of carbon nanotube pillars on its gas ionization characteristicsChang, Chia-Tsung; Huang, Chun-Yu; Li, Yu-Ren; Cheng, Huang-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2015A novel AlGaN/GaN multiple aperture vertical high electron mobility transistor with silicon oxide current blocking layerShrestha, Niraj Man; Wang, Yuen Yee; Li, Yiming; Chang, Edward Yi; 材料科學與工程學系; 資訊工程學系; Department of Materials Science and Engineering; Department of Computer Science