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Issue DateTitleAuthor(s)
1-Jul-2014Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric EffectTsai, Szu-Ping; Hsu, Heng-Tung; Chiang, Che-Yang; Tu, Yung-Yi; Chang, Chia-Hua; Hsieh, Ting-En; Wang, Huan-Chung; Liu, Shih-Chien; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2015高性能氮化鋁鎵/氮化鎵電晶體之製作與分析郭家銘; 荊鳳德; Guo, Jia-Ming; Chin, Albert; 電子工程學系 電子研究所
2013藉由高介電質材料做表面鈍化及閘極絕緣層改善氮化鋁鎵/氮化鎵之高電子遷移率電晶體元件特性廖仁廷; Liao, Jen-Ting; 張翼; 林萬里; 影像與生醫光電研究所
2013藉由氮化鋁層間鈍化層之插入改善氮化矽氮化鋁鎵/氮化鎵金屬絕緣半導體高電子遷移率電晶體之漏電流及電流潰散效應賴俊霖; Lai, Chung-Ling; 張翼; 馬哲申; Chang, Yi; Ma,Jer-Shen; 照明與能源光電研究所
2013使用二氧化矽/氧化鋁介電層運用在氮化鎵鋁/氮化鎵 金屬-絕緣層-半導體電晶體的研究邱于建; Chiu, Yu-Chien; 荊鳳德; Albert Chin; 光電系統研究所
1-Aug-2012Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN TemplatesWong, Yuen-Yee; Huang, Wei-Ching; Trinh, Hai-Dang; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Micheal; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Dec-2018AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As OxidantsWang, Huan-Chung; Hsieh, Ting-En; Lin, Yueh-Chin; Luc, Quang Ho; Liu, Shih-Chien; Wu, Chia-Hsun; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Feb-201030-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTsChang, Chia-Ta; Hsu, Heng-Tung; Chang, Edward Yi; Kuo, Chien-I; Huang, Jui-Chien; Lu, Chung-Yu; Miyamoto, Yasuyuki; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Jul-2014Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric EffectTsai, Szu-Ping; Hsu, Heng-Tung; Chiang, Che-Yang; Tu, Yung-Yi; Chang, Chia-Hua; Hsieh, Ting-En; Wang, Huan-Chung; Liu, Shih-Chien; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2016利用覆晶構裝設計改善氮化鋁鎵/氮化鎵高電子遷移率電晶體之特性蔡思屏; 張翼; Tsai, Szu-Ping; 材料科學與工程學系所

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