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Issue DateTitleAuthor(s)
1980GENERALIZED THEORY AND REALIZATION OF A VOLTAGE-CONTROLLED NEGATIVE-RESISTANCE MOS DEVICE (LAMBDA-MOSFET)WU, CY; LAI, KN; WU, CY; 電控工程研究所; 奈米中心; Institute of Electrical and Control Engineering; Nano Facility Center
1980MAGNETOACOUSTIC EFFECTS OF NONPARABOLIC BAND-STRUCTURE IN NONDEGENERATE PIEZOELECTRIC SEMICONDUCTORSWU, CC; TSAI, J; 應用數學系; Department of Applied Mathematics
1980INTERFACIAL LAYER THEORY OF THE SCHOTTKY-BARRIER DIODESWU, CY; 電控工程研究所; 奈米中心; Institute of Electrical and Control Engineering; Nano Facility Center
1980CURRENT GAIN OF THE BIPOLAR-TRANSISTORWU, CY; 電控工程研究所; 奈米中心; Institute of Electrical and Control Engineering; Nano Facility Center
1980ON THE FORWARD CURRENT-VOLTAGE CHARACTERISTICS OF P+-N-N+(N+-P-P+) EPITAXIAL DIODESWU, CY; 電控工程研究所; 奈米中心; Institute of Electrical and Control Engineering; Nano Facility Center
1980DESIGN OF SHARP CUTOFF LOW-PASS MAXIMALLY FLAT RC-ACTIVE FILTERS BY CASCADING 3RD-ORDER BLOCKSWEI, CH; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
1980CONDITIONS FOR THE LOCAL EXISTENCE OF METRIC IN A GENERIC AFFINE MANIFOLDCHENG, KS; NI, WT; 交大名義發表; National Chiao Tung University
1980THEORETICAL AND EXPERIMENTAL CHARACTERIZATION OF THE DUAL-BASE TRANSISTOR (DUBAT)WU, CY; WU, CY; 電控工程研究所; 奈米中心; Institute of Electrical and Control Engineering; Nano Facility Center
1980A NEW PHOTO-SENSITIVE VOLTAGE-CONTROLLED DIFFERENTIAL NEGATIVE-RESISTANCE DEVICE - THE LAMBDA-BIPOLAR PHOTO-TRANSISTORWU, CY; WU, CY; SHENG, HD; 交大名義發表; 奈米中心; National Chiao Tung University; Nano Facility Center
1980EFFECTS OF 1P3/2 AND OF 5/2 HOLE EXCITATIONS ON N = 50 ISOTONESCHIANG, HC; WANG, MC; HAN, CS; 電子物理學系; Department of Electrophysics