Browsing by Author Yang, Chih-Cheng

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 6 of 6
Issue DateTitleAuthor(s)
9-Nov-2018Enhancement of Surface Chemical and Physical Properties of Germanium-Sulfur Thin Film Using a Water-Supplemented Carbon Dioxide Supercritical Fluid Treatment TechniqueYang, Chih-Cheng; Chen, Po-Hsun; Shih, Chih-Cheng; Wang, Ming-Hui; Tsai, Tsung-Ming; Zheng, Hao-Xuan; Chen, Wen-Chung; Chen, Min-Chen; Huang, Hui-Chun; Ma, Xiao-Hua; Hao, Yue; Huang, Jen-Wei; Sze, Simon M.; Chang, Ting-Chang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-1970Indium Diffusion Behavior and Application in HfO2-Based Conductive Bridge Random Access MemoryZheng, Hao-Xuan; Shih, Chih-Cheng; Chang, Ting-Chang; Shih, Lin-Yi; Shih, Yao-Kai; Tseng, Yi-Ting; Chen, Wen-Chung; Huang, Wei-Chen; Yang, Chih-Cheng; Wu, Pei-Yu; Huang, Hui-Chun; Tsai, Tsung-Ming; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2019The influence of temperature on set voltage for different high resistance state in 1T1R devicesTan, Yung-Fang; Su, Yu-Ting; Chen, Min-Chen; Chang, Ting-Chang; Tsai, Tsung-Ming; Tseng, Yi-Ting; Yang, Chih-Cheng; Zheng, Hao-Xuan; Chen, Wen-Chung; Lin, Chun-Chu; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Nov-2016Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access MemoryChen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Su, Yu-Ting; Wu, Cheng-Hsien; Su, Wan-Ching; Yang, Chih-Cheng; Chen, Min-Chen; Tu, Chun-Hao; Chen, Kai-Huang; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Jul-2006Phase characterization and tunable photoluminescence of Eu-doped strontium-substituted nanohalophosphateYang, Chih-Cheng; Chen, San-Yuan; Liu, Dean-Mo; 交大名義發表; National Chiao Tung University
1-Jan-2017Suppression of endurance degradation by applying constant voltage stress in one-transistor and one-resistor resistive random access memorySu, Yu-Ting; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Chen, Hsin-Lu; Chen, Min-Chen; Yang, Chih-Cheng; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics