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20050.1 mu m poly-Si thin film transistors for system-on-panel (SoP) applicationsTsui, BY; Lin, CP; Huang, CF; Xiao, YH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003Anisotropic thermal conductivity of nano-porous silica filmTsui, BY; Yang, CC; Fang, KL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2004Anisotropic thermal conductivity of nanoporous silica filmTsui, BY; Yang, CC; Fang, KL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Characteristics of Modified-Schottky-Barrier (MSB) FinFETsLin, CP; Tsui, BY; 電機學院; 電子工程學系及電子研究所; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics
1-十月-2004A comprehensive study on the FIBL of nanoscale MOSFETsTsui, BY; Chin, LF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2001Dielectric and barrier properties of spin-on organic aromatic low dielectric constant polymers FLARE and SiLKWu, ZC; Shiung, ZW; Wu, RG; Liu, YL; Wu, WH; Tsui, BY; Chen, MC; Chang, W; Chou, PF; Jang, SM; Hu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2005Effects of base oxide thickness and silicon composition on charge trapping in HfSiO/SiO(2) high-k gate stacksWu, WH; Chen, MC; Tsui, BY; How, YT; Yao, LG; Jin, Y; Tao, HJ; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2002Electrical and material stability of Orion(TM) CVD ultra low-k dielectric film for copper interconnectionFang, KL; Tsui, BY; Yang, CC; Chen, MC; Lee, SD; Beekmann, K; Tony, W; Giles, K; Ishaq, S; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2005Electrical characteristics of thin HfO(2) gate dielectrics prepared using different pre-deposition surface treatmentsChen, CW; Chien, CH; Perng, TH; Yang, MJ; Liang, JS; Lehnen, P; Tsui, BY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2000Electrical reliability issues of integrating low-K dielectrics with Cu metallizationWu, ZC; Shiung, ZW; Wang, CC; Fang, KL; Wu, RG; Liu, YL; Tsui, BY; Chen, MC; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2001Electrical reliability of low dielectric constant diffusion barrier (a-SiC : H) for copper interconnectFang, KL; Tsui, BY; Yang, CC; Lee, SD; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Electrical stability and reliability of ultralow dielectric constant porous carbon-doped oxide film for copper interconnectFang, KL; Tsui, BY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-六月-2003Formation of interfacial layer during reactive sputtering of hafnium oxideTsui, BY; Chang, HW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004High thermal stability metal gate with tunable work functionHuang, CF; Tsui, BY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2005High-performance poly-Si TFTs fabricated by implant-to-silicide techniqueLin, CP; Mao, YH; Tsui, BY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2006High-performance poly-silicon TFTs using HfO2 gate dielectricLin, CP; Tsui, BY; Yang, MJ; Huang, RH; Chien, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2005Hot-carrier effects in p-channel modified Schottky-barrier FinFETsLin, CP; Tsui, BY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2001Impact of interface nature on deep sub-micron Al-plug resistanceTsui, BY; Yang, TJ; Ku, TK; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2001Impact of silicide formation on the resistance of common source/drain regionTsui, BY; Wu, MD; Gan, TC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2003Investigation of Cu/TaN metal gate for metal-oxide-silicon devicesTsui, BY; Huang, CF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics