Browsing by Author Tseng, Tseung-Yuen

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Issue DateTitleAuthor(s)
28-Sep-2013Abnormal threshold voltage shift under hot carrier stress in Ti1-xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistorsTsai, Jyun-Yu; Chang, Ting-Chang; Lo, Wen-Hung; Ho, Szu-Han; Chen, Ching-En; Chen, Hua-Mao; Tseng, Tseung-Yuen; Tai, Ya-Hsiang; Cheng, Osbert; Huang, Cheng-Tung; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-Jan-1970Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistorsHo, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Luo, Hung-Ping; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
3-Dec-2012Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistorsHo, Szu-Han; Chang, Ting-Chang; Lu, Ying-shin; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Chen, Hua-Mao; Wu, Chi-Wei; Luo, Hung-Ping; Liu, Guan-Ru; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
Apr-2016Analysis of Oxide Trap Characteristics by Random Telegraph Signals in nMOSFETs With HfO2-Based Gate DielectricsChen, Ching-En; Chang, Ting-Chang; You, Bo; Tsai, Jyun-Yu; Lo, Wen-Hung; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Hung, Yu-Ju; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2013Anomalous Gate Current Hump after Dynamic Negative Bias Stress and Negative-Bias Temperature-Instability in p-MOSFETs with HfxZr1-xO2 and HfO2/Metal Gate StacksHo, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Chen, Hua-Mao; Liu, Guan-Ru; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Chen, Daniel; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
28-Jun-2010Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stressChen, Yu-Chun; Chang, Ting-Chang; Li, Hung-Wei; Chen, Shih-Ching; Lu, Jin; Chung, Wan-Fang; Tai, Ya-Hsiang; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-Feb-2012Bottom Electrode Modification of ZrO2 Resistive Switching Memory Device with Au NanodotsLee, Dai-Ying; Yao, I-Chuan; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Aug-2017Carbon Nanotube/Nitrogen-Doped Reduced Graphene Oxide Nanocomposites and Their Application in SupercapacitorsYang, Chih-Chieh; Tsai, Meng-Han; Huang, Chun-Wei; Yen, Po-Jen; Pan, Chien-Chung; Wu, Wen-Wei; Wei, Kung-Hwa; Dung, Lan-Rong; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
25-Jan-2019Characteristics of flexible and transparent Eu2O3 resistive switching memory at high bending conditionAluguri, R.; Sailesh, R.; Kumar, D.; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Jan-2009Characteristics of SrTiO(3) Insulated Layer in SBT Ferroelectric Thin FilmsChou, Hsiu-Yu; Lee, En-Ko; Lin, Meng-Han; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2009Characteristics of SrTiO3 Insulated Layer in SBT Ferroelectric Thin FilmsChou, Hsiu-Yu; Lee, En-Ko; Lin, Meng-Han; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2013Characterization of environment-dependent hysteresis in indium gallium zinc oxide thin film transistorsChen, Yu-Chun; Chang, Ting-Chang; Li, Hung-Wei; Chung, Wan-Fang; Chen, Shih-Cheng; Wu, Chang-Pei; Chen, Yi-Hsien; Tai, Ya-Hsiang; Tseng, Tseung-Yuen; Yeh(Huang), Fon-Shan; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
24-Feb-2010Charge storage characteristics of high density Mo nanocrystal embedded in silicon oxide and silicon nitrideLin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Shih-Ching; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2008Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reductionLin, Chao-Cheng; Chang, Ting-; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma TreatmentLin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
9-Mar-2009Cobalt nanodots formed by annealing the CoSiO layer for the application of the nonvolatile memoryHu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Shueh, Pei-Kun; Lin, Chao-Cheng; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Min-Chen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2014Compact Ga-Doped ZnO Nanorod Thin Film for Making High-Performance Transparent Resistive Switching MemoryHuang, Chun-Yang; Ho, Yen-Ting; Hung, Chung-Jung; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Jan-2017A Comprehensive Study of 3-stage High Resistance State Retention Behavior for TMO ReRAMs from Single Cells to a Large ArrayLin, Yu-Hsuan; Ho, Yung-Han; Lee, Ming-Hsiu; Wang, Chao-Hung; Lin, Yu-Yu; Lee, Feng-Ming; Hsu, Kai-Chieh; Tseng, Po-Hao; Lee, Dai-Ying; Chiang, Kuang-Hao; Wang, Keh-Chung; Tseng, Tseung-Yuen; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Jun-2016A comprehensive study of bipolar operation in resistive switching memory devicesBerco, Dan; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
23-Mar-2018Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusionKumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics