Browsing by Author Quang-Ho Luc

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Showing results 1 to 5 of 5
Issue DateTitleAuthor(s)
2012Characterizations of GaN Films Grown on Si (111) Substrates with Various Growth Temperatures of Multiple AlN Buffer LayersBinh-Tinh Tran; Chang, Edward Yi; Lin, Kung-Liang; Luong, Tien-Tung; Yu, Hung-Wei; Huang, Man-Chi; Chung, Chen-Chen; Hai-Dang Trinh; Hong-Quan Nguyen; Chi-Lang Nguyen; Quang-Ho Luc; 材料科學與工程學系; Department of Materials Science and Engineering
30-Sep-2013Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current densityHai-Dang Trinh; Lin, Yueh-Chin; Minh-Thuy Nguyen; Hong-Quan Nguyen; Quoc-Van Duong; Quang-Ho Luc; Wang, Shin-Yuan; Manh-Nghia Nguyen; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Apr-2014Effect of annealing processes on the electrical properties of the atomic layer deposition Al2O3/In0.53Ga0.47As metal oxide semiconductor capacitorsQuang-Ho Luc; Chang, Edward Yi; Trinh, Hai-Dang; Hong-Quan Nguyen; Binh-Tinh Tran; Lin, Yueh-Chin; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Jan-2012Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPsHai-Dang Trinh; Lin, Yue-Chin; Chang, Edward Yi; Hong-Quan Nguyen; Wang, Shin-Yuan; Wong, Yuen-Yee; Binh-Tinh Tran; Quang-Ho Luc; Chi-Lang Nguyen; Dee, Chang-Fu; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jan-2017Performance Improvement of InGaAs FinFET Using NH3 TreatmentChang, Edward Yi; Quang-Ho Luc; Huy-Binh Do; Lin, Yueh-Chin; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology