Browsing by Author Lu, Chih-Yuan

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 20 of 48  next >
Issue DateTitleAuthor(s)
2007A 2-bit/cell, maskless, self-aligned resistance memory with high thermal stabilityHe, ChiaHua; Lee, Ming-Daou; Pan, Chen-Ling; Lai, Erb-Kun; Yao, Yeong-Der; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jan-2018Analysis and Realization of TLC or even QLC Operation with a High Performance Multi-times Verify Scheme in 3D NAND Flash memoryLu, C. C.; Cheng, C. C.; Chiu, H. P.; Lin, W. L.; Chen, T. W.; Ku, S. H.; Tsai, Wen-Jer; Lu, T. C.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006<bold>Read Current Instability Arising from Random Telegraph Noise in Localized Storage, Multi-Level SONOS Flash Memory</bold>Gu, S. H.; Li, C. W.; Wang, Tahui; Lu, W. P.; Chen, K. C.; Ku, Joseph; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Characterization and Monte Carlo analysis of secondary electrons induced program disturb in a buried diffusion bit-line SONOS flash memoryTang, Chun-Jung; Li, C. W.; Wang, Tahui; Gu, S. H.; Chen, P. C.; Chang, Y. W.; Lu, T. C.; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
17-Jul-2017Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal methodLiu, Yu-Heng; Jiang, Cheng-Min; Lin, Hsiao-Yi; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan; 電機學院; 電子工程學系及電子研究所; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics
1-Jan-2018Chip-Level Characterization and RTN-Induced Error Mitigation beyond 20nm Floating Gate Flash MemoryLin, T. W.; Ku, S. H.; Cheng, C. H.; Lee, C. W.; Ijen-Huang; Tsai, Wen-Jer; Lu, T. C.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2017A Comprehensive Study of 3-stage High Resistance State Retention Behavior for TMO ReRAMs from Single Cells to a Large ArrayLin, Yu-Hsuan; Ho, Yung-Han; Lee, Ming-Hsiu; Wang, Chao-Hung; Lin, Yu-Yu; Lee, Feng-Ming; Hsu, Kai-Chieh; Tseng, Po-Hao; Lee, Dai-Ying; Chiang, Kuang-Hao; Wang, Keh-Chung; Tseng, Tseung-Yuen; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2015Cycling-Induced SET-Disturb Failure Time Degradation in a Resistive Switching MemoryChung, Yueh-Ting; Su, Po-Cheng; Cheng, Yu-Hsuan; Wang, Tahui; Chen, Min-Cheng; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Jan-2017Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash MemoryLiu, Yu-Heng; Jiang, Cheng-Min; Chen, Wei-Chun; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Jan-2017Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash MemoryLiu, Yu-Heng; Jiang, Cheng-Min; Chen, Wei-Chun; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2018Error Characterization and ECC Usage Relaxation beyond 20nm Floating Gate NAND Flash MemoryKu, S. H.; Lin, T. W.; Cheng, C. H.; Lee, C. W.; Chen, Ti-Wen; Tsai, Wen-Jer; Lu, T. C.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2018Excellent High Temperature Retention of TiOXNV ReRAM by Interfacial Layer EngineeringLin, Yu-Hsuan; Lee, Dai-Ying; Wang, Chao-Hung; Lee, Ming-Hsiu; Ho, Yung-Han; Lai, Erh-Kun; Chiang, Kuang-Hao; Lung, Hsiang-Lan; Wang, Keh-Chung; Tseng, Tseung-Yuen; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2016Excellent Resistance Variability Control of WOx ReRAM by a Smart Writing AlgorithmLin, Yu-Hsuan; Wu, Jau-Yi; Lee, Ming-Hsiu; Wang, Tien-Yen; Lin, Yu-Yu; Lee, Feng-Ming; Lee, Dai-Ying; Lai, Erh-Kun; Chiang, Kuang-Hao; Lung, Hsiang-Lan; Hsieh, Kuang-Yeu; Tseng, Tseung-Yuen; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
16-Oct-2006Extraction of nitride trap density from stress induced leakage current in silicon-oxide-nitride-oxide-silicon flash memoryGu, Shaw-Hung; Wang, Tahui; Lu, Wen-Pin; Ku, Yen-Hui Joseph; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2019Grain Boundary Trap-Induced Current Transient in a 3-D NAND Flash Cell StringLin, Wei-Liang; Tsai, Wen-Jer; Cheng, C. C.; Ku, S. H.; Liu, Lenvis; Hwang, S. W.; Lu, Tao-Cheng; Chen, Kuang-Chao; Tseng, Tseung-Yuen; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008Highly reliable MA BE-SONOS (Metal-Al2O3 bandgap engineered SONOS) using a SiO2 buffer layerLai, Sheng-Chih; Lue, Hang-Ting; Liao, Chien-Wei; Wu, Tai-Bor; Yang, Ming-Jui; Lue, Yi-Hsien; Hsieh, Jung-Yu; Wang, Szu-Yu; Luo, Guang-Li; Chien, Chao-Hsin; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan; 物理研究所; 奈米中心; Institute of Physics; Nano Facility Center
1-Jun-2015Impact of V-pass Interference on Charge-Trapping NAND Flash Memory DevicesHsiao, Yi-Hsuan; Lue, Hang-Ting; Chen, Wei-Chen; Chang, Kuo-Pin; Tsui, Bing-Yue; Hsieh, Kuang-Yeu; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006Investigation of charge loss in cycled NBit cells via field and temperature accelerationsTsai, W. J.; Zous, N. K.; Chen, H. Y.; Liu, Lenvis; Yeh, C. C.; Chen, Sam; Lu, W. P.; Wang, Tahui; Ku, Joseph; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2018Investigation of Data Pattern Effects on Nitride Charge Lateral Migration in a Charge Trap Flash Memory by Using a Random Telegraph Signal MethodLiu, Y. H.; Lin, H. Y.; Jiang, C. M.; Wang, Tahui; Tsai, W. J.; Lu, T. C.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2019Investigation of Electron and Hole Lateral Migration in Silicon Nitride and Data Pattern Effects on ${V}_{{t}}$ Retention Loss in a Multilevel Charge Trap Flash MemoryLiu, Yu-Heng; Zhan, Ting-Chien; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics