Browsing by Author Lin, J. C.

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 12 of 12
Issue DateTitleAuthor(s)
2010Characteristics of Zinc Oxide Thin Film Transistors Fabricated by Location-Controlled Hydrothermal MethodYang, P. Y.; Wang, J. L.; Tsai, W. C.; Wang, S. J.; Chen, P. C.; Su, N. C.; Lin, J. C.; Lee, I. C.; Chang, C. T.; Wei, Y. C.; Cheng, H. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2016Enhancement-Mode GaN MIS-HEMTs with HfLaOx Gate InsulatorLin, Y. C.; Lin, J. C.; Lin, Y.; Wu, C. H.; Huang, Y. X.; Liu, S. C.; Hsu, H. T.; Hsieh, T. E.; Kakushima, K.; Iwai, H.; Chang, E. Y.; 材料科學與工程學系; 國際半導體學院; Department of Materials Science and Engineering; International College of Semiconductor Technology
2016Evaluation of GaN HEMT with Field Plate for Reliability ImprovementLin, Y. C.; Lin, J. C.; Lin, Y.; Wu, C. H.; Chin, P. C.; Hsu, H. T.; Hsieh, T. E.; Iwai, H.; Chang, E. Y.; 材料科學與工程學系; 國際半導體學院; Department of Materials Science and Engineering; International College of Semiconductor Technology
1-Apr-2008GaN p-i-n photodetectors with an LT-GaN interlayerLin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Huang, K. C.; Chen, W. R.; Lan, C. H.; Huang, C. C.; Lin, W. J.; Cheng, Y. C.; 電子物理學系; Department of Electrophysics
1-Feb-2007GaN-based light-emitting diodes prepared on vicinal sapphire substratesLin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Huang, K. C.; Chen, W. R.; Cheng, Y. C.; Lin, W. J.; 電子物理學系; Department of Electrophysics
15-Oct-2010Growth and optical properties of high-density InN nanodotsKe, W. C.; Lee, S. J.; Kao, C. Y.; Chen, W. K.; Chou, W. C.; Lee, M. C.; Chang, W. H.; Lin, W. J.; Cheng, Y. C.; Lee, T. C.; Lin, J. C.; 電子物理學系; Department of Electrophysics
1-Aug-2008High light output intensity of titanium dioxide textured light-emitting diodesHuang, K. C.; Lan, W. H.; Huang, K. F.; Lin, J. C.; Cheng, Y. C.; Lin, W. J.; Pan, S. M.; 電子物理學系; Department of Electrophysics
22-Oct-2007High responsivity of GaN p-i-n photodiode by using low-temperature interlayerLin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Huang, K. C.; Chen, W. R.; Huang, C. Y.; Lai, W. C.; Lin, W. J.; Cheng, Y. C.; 電子物理學系; Department of Electrophysics
1-Jan-2008Improved external quantum efficiency of GaN p-i-n photodiodes with a TiO2 roughened surfaceLin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Huang, K. C.; Cheng, Y. C.; Lin, W. J.; 電子物理學系; Department of Electrophysics
2009In0.11Ga0.89N-based p-i-n photodetectorSu, Y. K.; Lee, H. C.; Lin, J. C.; Huang, K. C.; Lin, W. J.; Li, T. C.; Chang, K. J.; 電子物理學系; Department of Electrophysics
1-Jul-2008Low dark current GaN p-i-n photodetectors with a low-temperature AIN interlayerLin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Chen, W. R.; Huang, K. C.; Cheng, Y. C.; Lin, W. J.; 電子物理學系; Department of Electrophysics
2007Middleware based inpatient healthcare information systemHsieh, S. H.; Hsieh, S. L.; Weng, Y. C.; Yang, T. H.; Lai, Feipei; Cheng, P. H.; Ping, X. O.; Jan, M. Y.; Lin, J. C.; Peng, C. H.; Huang, K. H.; Ko, L. F.; Chen, C. H.; Hsu, K. P.; 資訊技術服務中心; Information Technology Services Center