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公開日期標題作者
1-二月-2003Ambipolar Schottky barrier silicon-on-insulator metal-oxide-semiconductor transistorsLin, HC; Wang, MF; Lu, CY; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2002Ambipolar Schottky-barrier TFTsLin, HC; Yeh, KL; Huang, TY; Huang, RG; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2002Application of field-induced source/drain Schottky metal-oxide-semiconductor to fin-like body field-effect transistorLin, HC; Wang, MF; Hou, FJ; Liu, JT; Huang, TY; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1999Breakdown characteristics of ultra-thin gate oxides caused by plasma chargingChen, CC; Lin, HC; Chang, CY; Chien, CH; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2002Breakdown modes and their evolution in ultrathin gate oxideLin, HC; Lee, DY; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Channel backscattering characteristics of strained PMOSFETs with embedded SiGe source/drainLin, HN; Chen, HW; Ko, CH; Ge, CH; Lin, HC; Huang, TY; Lee, WC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2005Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETsLin, HN; Chen, HW; Ko, CH; Ge, CH; Lin, HC; Huang, TY; Lee, WC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2002Characteristics of polycrystalline silicon thin-film transistors with electrical source/drain extensions induced by a bottom sub-gateYu, M; Lin, HC; Chen, GH; Huang, TY; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003Characteristics of Schottky barrier poly-Si thin film transistors with excimer laser annealing treatmentYeh, KL; Lin, HC; Tsai, RW; Lee, MH; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-八月-1996Characterization of antenna effect by nondestructive gate current measurementLin, HC; Chien, CH; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2002Charge pumping profiling technique for the evaluation of plasma-charging-enhanced hot-carrier effect in short-N-channel metal-oxide-semiconductor field-effect transistorsChen, SJ; Chung, SSS; Lin, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
26-九月-1997Charge transfer process in Tl2Ba2Ca2Cu3O10 and Tl2Ba2CaCu2O8 thin films probed by polarized X-ray absorption spectroscopyChen, JM; Liu, RG; Liu, RS; Lin, HC; Uen, TM; Juang, JY; Gou, YS; 電子物理學系; Department of Electrophysics
1-十二月-1999The combined effects of nitrogen implantation at S/D extension and N2O oxide on 0.18 mu m N- and P-metal oxide field effect transistors (MOSFETs)Chao, TS; Chang, SJ; Chien, CH; Lin, HC; Huang, TY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
27-二月-2006Complementary carbon nanotube-gated carbon nanotube thin-film transistorChen, BH; Lin, HC; Huang, TY; Wei, JH; Wang, HH; Tsai, MJ; Chao, TS; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
30-七月-2001Conduction mechanisms for off-state leakage current of Schottky barrier thin-film transistorsYeh, KL; Lin, HC; Huang, RG; Tsai, RW; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2004CoTiO3 high-kappa, dielectrics on HSG for DRAM applicationsChao, TS; Ku, WM; Lin, HC; Landheer, D; Wang, YY; Mori, Y; 奈米中心; Nano Facility Center
15-二月-1996Critical current densities of submillimeter single-grain TL-2223 superconducting thin filmLin, HC; Juang, JY; Wu, KH; Gou, YS; Uen, TM; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
15-五月-1997Crystalline structure changes in GaN films grown at different temperaturesLin, HC; Ou, J; Chen, WK; Chen, WH; Lee, MC; 交大名義發表; 電子物理學系; National Chiao Tung University; Department of Electrophysics
2005Determination of effective density-of-states using a novel Schottky barrier poly-Si thin-film transistorLin, HC; Lee, MH; Yeh, KL; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2006Device characteristics and aggravated negative bias temperature instability in p-channel metal-oxide-semiconductor field-effect transistors with uniaxial compressive strainLu, CY; Lin, HC; Chang, YF; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics