Browsing by Author Lin, Chih-Yang

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Issue DateTitleAuthor(s)
7-Jul-2017Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrodeLin, Chih-Yang; Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Sheng-Dong; Tsai, Tsung-Ming; Pan, Chih-Hung; Chen, Min-Chen; Su, Yu-Ting; Tseng, Yi-Ting; Chang, Yao-Feng; Chen, Ying-Chen; Huang, Hui-Chun; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2007Automatic method to compare the lanes in gel electrophoresis imagesLin, Chih-Yang; Ching, Yu-Tai; Yang, Yun-Liang; 生物科技學系; 資訊工程學系; Department of Biological Science and Technology; Department of Computer Science
2007Bistable resistive switching in Al2O3 memory thin filmsLin, Chih-Yang; Wu, Chen-Yu; Wu, Chung-Yi; Hu, Chenming; Tsenga, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2013Computer Aided Alignment and Quantitative 4D Structural Plasticity Analysis of NeuronsLee, Ping-Chang; He, Hai-yan; Lin, Chih-Yang; Ching, Yu-Tai; Cline, Hollis T.; 分子醫學與生物工程研究所; Institute of Molecular Medicine and Bioengineering
2009Constructing Neuronal Structure from 3D Confocal Microscopic ImagesLee, Ping-Chang; Chang, Hsiu-Ming; Lin, Chih-Yang; Chiang, Ann-Shyn; Ching, Yu-Tai; 資訊工程學系; Department of Computer Science
1-Dec-2008Current status of resistive nonvolatile memoriesLin, Chih-Yang; Liu, Chih-Yi; Lin, Chun-Chieh; Tseng, T. Y.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-Dec-2008Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al(2)O(3)/Pt devicesLin, Chih-Yang; Lee, Dai-Ying; Wang, Sheng-Yi; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2007Effect of top electrode material on resistive switching properties of ZrO2 film memory devicesLin, Chih-Yang; Wu, Chen-Yu; Wu, Chung-Yi; Lee, Tzyh-Cheang; Yang, Fu-Liang; Hu, Chenming; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Mar-2016Effects of erbium doping of indium tin oxide electrode in resistive random access memoryChen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Jin, Fu-Yuan; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
14-Sep-2009Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO(2) memory filmsWang, Sheng-Yu; Lee, Dai-Ying; Tseng, Tseung-Yuen; Lin, Chih-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2015Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access MemoryLin, Chih-Yang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Zhang, Rui; Liu, Kuan-Hsien; Chen, Hua-Mao; Tseng, Yi-Ting; Hung, Ya-Chi; Syu, Yong-En; Zheng, Jin-Cheng; Wang, Ying-Lang; Zhang, Wei; Sze, Simon M.; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-Jan-2008Electrical properties and fatigue behaviors of ZrO(2) resistive switching thin filmsLin, Chih-Yang; Wang, Sheng-Yi; Lee, Dai-Ying; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-Jun-2005EXTRACTION OF CORONARY ARTERIAL TREE USING CINE X-RAY ANGIOGRAMSLin, Chih-Yang; Ching, Yu-Tai; 資訊工程學系; Department of Computer Science
1-Jul-2011Improved resistive switching properties of Ti/ZrO(2)/Pt memory devices for RRAM applicationWang, Sheng-Yu; Tsai, Chen-Han; Lee, Dai-Ying; Lin, Chih-Yang; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2015Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride-Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 FluidChang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Zhang, Rui; Chen, Kai-Huang; Chen, Jung-Hui; Chen, Min-Chen; Huang, Hui-Chun; Zhang, Wei; Lin, Chih-Yang; Tseng, Yi-Ting; Lin, Hua-Ching; Zheng, Jin-Cheng; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2008Improvement of resistive switching characteristics in SrZrO3 thin films with embedded Cr layerLin, Chih-Yang; Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
May-2016Improving Performance by Doping Gadolinium Into the Indium-Tin-Oxide Electrode in HfO2-Based Resistive Random Access MemoryChen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Jin, Fu-Yuan; Chen, Min-Chen; Huang, Hui-Chun; Wang, Ming-Hui; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
3-Dec-2007Memory effect of RF sputtered ZrO2 thin filmsLin, Chih-Yang; Wu, Chung-Yi; Wu, Chen-Yu; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-2007Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrodeLin, Chih-Yang; Wu, Chung-Yi; Wu, Chen-Yu; Tseng, Tseung-Yuen; Hu, Chenming; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Dec-2016Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium-Tin Oxide Insulator in Resistive Random Access MemoryChen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Shih, Chih-Cheng; Wu, Cheng-Hsien; Yang, Cheng-Chi; Su, Yu-Ting; Lin, Chih-Yang; Tseng, Yi-Ting; Chen, Min-Chen; Wang, Ruey-Chi; Leu, Ching-Chich; Chen, Kai-Huang; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics