Browsing by Author Kumar, Dayanand

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Showing results 1 to 6 of 6
Issue DateTitleAuthor(s)
23-Mar-2018Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusionKumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-May-2017Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layerKumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2017High Performance Bipolar Resistive Switching Characteristics in SiO2/ZrO2/SiO2 Tri-layer Based CBRAM DeviceKumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
16-Nov-2015Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architectureChand, Umesh; Huang, Chun-Yang; Kumar, Dayanand; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2019One Bipolar Selector-One Resistor for Flexible Crossbar Memory ApplicationsKumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2018Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory deviceKumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics