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公開日期標題作者
1-六月-2014100-nm IGZO Thin-Film Transistors With Film Profile EngineeringLin, Horng-Chih; Shie, Bo-Shiuan; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2013a-IGZO 薄膜電晶體的製作與特性分析張維軒; Chang, Wei-Hsuan; 林鴻志; 黃調元; Lin, Horng-Chih; Huang, Tiao-Yuan; 電子工程學系 電子研究所
2010a-IGZO 薄膜電晶體的製作與特性分析顏同偉; Yen, Tung-Wei; 林鴻志; 黃調元; Lin, Horng-Chih; Huang, Tiao-Yuan; 電子研究所
1-二月-2012Analytical Model of Subthreshold Current and Threshold Voltage for Fully Depleted Double-Gated Junctionless TransistorLin, Zer-Ming; Lin, Horng-Chih; Liu, Keng-Ming; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2006A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effectsChen, Bae-Horng; Wei, Jeng-Hua; Lo, Po-Yuan; Wang, Hung-Hsiang; Lai, Ming-Jinn; Tsai, Ming-Jinn; Chao, Tien Sheng; Lin, Horng-Chih; Huang, Tiao-Yuan; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-八月-2013Channel Thickness Effect on High-Frequency Performance of Poly-Si Thin-Film TransistorsChen, Kun-Ming; Tsai, Tzu-I; Lin, Ting-Yao; Lin, Horng-Chih; Chao, Tien-Sheng; Huang, Guo-Wei; Huang, Tiao-Yuan; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-七月-2011Characterisation of a suspended nanowire channel thin-film transistor with sub-100 nm air gapKuo, Chia-Hao; Hsu, Chia-Wei; Lin, Horng-Chih; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2012Characteristics of n-Type Asymmetric Schottky-Barrier Transistors with Silicided Schottky-Barrier Source and Heavily n-Type Doped Channel and DrainLin, Zer-Ming; Lin, Horng-Chih; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2012Characteristics of n-Type Junctionless Poly-Si Thin-Film Transistors With an Ultrathin ChannelLin, Horng-Chih; Lin, Cheng-I; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2013Characteristics of Planar Junctionless Poly-Si Thin-Film Transistors With Various Channel ThicknessLin, Horng-Chih; Lin, Cheng-I; Lin, Zer-Ming; Shie, Bo-Shiuan; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008Characteristics of poly-Si nanowire transistors with multiple-gate configurationsHsu, Hsing-Hui; Lin, Homg-Chih; Lee, Ko-Hui; Huang, Jian-Fu; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2009Characterization of AC Hot-Carrier Effects in Poly-Si Thin-Film TransistorsLin, Horng-Chih; Chang, Kai-Hsiang; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2012Characterizations of polycrystalline silicon nanowire thin-film transistors enhanced by metal-induced lateral crystallizationSu, Chun-Jung; Huang, Yu-Feng; Lin, Horng-Chih; Huang, Tiao-Yuan; 電子工程學系及電子研究所; 奈米中心; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-十一月-2006Characterizing the channel backscattering behavior in nanoscale strained complementary metal oxide semiconductor field-effect transistorsLin, Hono-Nien; Chen, Hung-Wei; Ko, Chih-Hsin; Ge, Chung-Hu; Lin, Horng-Chih; Huang, Tiao-Yuan; Lee, Wen-Chin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2015Comparison of Electrical Characteristics of N-type Silicon Junctionless Transistors with and without Film Profile Engineering by TCAD SimulationTsai, Jung-Ruey; Lin, Horng-Chih; Chang, Hsiu-Fu; Shie, Bo-Shiuan; Wen, Ting-Ting; Huang, Tiao-Yuan; 電子工程學系及電子研究所; 奈米中心; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-四月-2010A comparison of plasma-induced damage on the reliability between high-k/metal-gate and SiO(2)/poly-gate complementary metal oxide semiconductor technologyWeng, Wu-Te; Lee, Yao-Jen; Lin, Horng-Chih; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Comparisons on performance improvement by nitride capping layer among different channel directions nMOSFETsTsai, Tzu-, I; Lee, Yao-Jen; Chen, King-Sheng; Wang, Jeff; Hsueh, Fu-Kuo; Lin, Horng-Chih; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007A comprehensive model for plasma damage enhanced transistor reliability degradationWeng, W. T.; Oates, A. S.; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2006Correlating drain-current with strain-induced mobility in nanoscale strained CMOSFETsLin, Hong-Nien; Chen, Hung-Wei; Ko, Chih-Hsin; Ge, Chung-Hu; Lin, Horng-Chih; Huang, Tiao-Yuan; Lee, Wen-Chin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006DC and AC NBTI stresses in pMOSFETs with PE-SiN cappingLu, Chia-Yu; Lin, Horng-Chih; Chang, Yi-Feng; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics