Browsing by Author Huang, Hui-Chun

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Issue DateTitleAuthor(s)
7-Jul-2017Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrodeLin, Chih-Yang; Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Sheng-Dong; Tsai, Tsung-Ming; Pan, Chih-Hung; Chen, Min-Chen; Su, Yu-Ting; Tseng, Yi-Ting; Chang, Yao-Feng; Chen, Ying-Chen; Huang, Hui-Chun; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2012Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC ApplicationsTsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Syu, Yong-En; Chuang, Siang-Lan; Chang, Geng-Wei; Liu, Guan-Ru; Chen, Min-Chen; Huang, Hui-Chun; Liu, Shih-Kun; Tai, Ya-Hsiang; Gan, Der-Shin; Yang, Ya-Liang; Young, Tai-Fa; Tseng, Bae-Heng; Chen, Kai-Huang; Tsai, Ming-Jinn; Ye, Cong; Wang, Hao; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-Mar-2013Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access MemoryChang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Wu, Hsing-Hua; Chen, Jung-Hui; Syu, Yong-En; Chang, Geng-Wei; Chu, Tian-Jian; Liu, Guan-Ru; Su, Yu-Ting; Chen, Min-Chen; Pan, Jhih-Hong; Chen, Jian-Yu; Tung, Cheng-Wei; Huang, Hui-Chun; Tai, Ya-Hsiang; Gan, Der-Shin; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-Oct-2018The Demonstration of Increased Selectivity During Experimental Measurement in Filament-Type Vanadium Oxide-Based SelectorChen, Chun-Kuei; Lin, Chih-Yang; Chen, Po-Hsun; Chang, Ting-Chang; Shih, Chih-Cheng; Tseng, Yi-Ting; Zheng, Hao-Xuan; Chen, Ying-Chen; Chang, Yao-Feng; Lin, Chun-Chu; Huang, Hui-Chun; Huang, Wei-Chen; Wang, Hao; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2013Effect of Electrode Material on Resistive Switching Characteristics in TaON Nonvolatile Memory DevicesChen, Min-Chen; Chang, Ting-Chang; Chiu, Yi-Chieh; Chen, Shih-Cheng; Huang, Sheng-Yao; Syu, Yong-En; Chang, Kuan-Chang; Huang, Hui-Chun; Tsai, Tsung-Ming; Gan, Der-Shin; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2016Effect of SiO2 Buffer Layer Thickness on Performance and Reliability of Flexible Polycrystalline Silicon TFTs Fabricated on PolyimideChen, Bo-Wei; Chang, Ting-Chang; Hung, Yu-Ju; Huang, Shin-Ping; Chen, Hua-Mao; Huang, Hui-Chun; Liao, Po-Yung; Chiang, Hsiao-Cheng; Zheng, Yu-Zhe; Yeh, Wei-Heng; Lin, Yu-Ho; Liang, Jonathan Siher; Chu, Ann-Kuo; Li, Hung-Wei; Tsai, Chih-Hung; Lu, Hsueh-Hsing; 光電工程學系; Department of Photonics
Mar-2016Effects of erbium doping of indium tin oxide electrode in resistive random access memoryChen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Jin, Fu-Yuan; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2015An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access MemoryZhang, Wei; Hu, Ying; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chen, Hsin-Lu; Su, Yu-Ting; Chu, Tian-Jian; Chen, Min-Chen; Huang, Hui-Chun; Su, Wan-Ching; Zheng, Jin-Cheng; Hung, Ya-Chi; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2013Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching DeviceSyu, Yong-En; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Chen, Min-Chen; Yang, Ya-Liang; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
31-Oct-2016Engineering interface-type resistance switching based on forming current compliance in ITO/Ga2O3: ITO/TiN resistance random access memory: Conduction mechanisms, temperature effects, and electrode influencePan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Po-Hsun; Chang-Chien, Shi-Wang; Chen, Min-Chen; Huang, Hui-Chun; Wu, Huaqiang; Deng, Ning; Qian, He; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
9-Nov-2018Enhancement of Surface Chemical and Physical Properties of Germanium-Sulfur Thin Film Using a Water-Supplemented Carbon Dioxide Supercritical Fluid Treatment TechniqueYang, Chih-Cheng; Chen, Po-Hsun; Shih, Chih-Cheng; Wang, Ming-Hui; Tsai, Tsung-Ming; Zheng, Hao-Xuan; Chen, Wen-Chung; Chen, Min-Chen; Huang, Hui-Chun; Ma, Xiao-Hua; Hao, Yue; Huang, Jen-Wei; Sze, Simon M.; Chang, Ting-Chang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
22-Jul-2013Enhancement of the stability of resistive switching characteristics by conduction path reconstructionHuang, Jheng-Jie; Chang, Ting-Chang; Yu, Chih-Cheng; Huang, Hui-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Yang, Jyun-Bao; Sze, Simon M.; Gan, Der-Shin; Chu, Ann-Kuo; Lin, Jian-Yang; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2011Formation and composition of titanium oxinitride nanocrystals synthesized via nitridizing titanium oxide for nonvolatile memory applicationsFeng, Li-Wei; Chang, Chun-Yen; Chang, Ting-Chang; Tu, Chun-Hao; Wang, Pai-Syuan; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Hui-Chun; Gan, Der-Shin; Ho, New-Jin; Chen, Shih-Ching; Chen, Shih-Cheng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2013Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid TreatmentChang, Kuan-Chang; Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Su, Yu-Ting; Jiang, Jhao-Ping; Chen, Kai-Huang; Huang, Hui-Chun; Syu, Yong-En; Gan, Der-Shin; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2013Improvement in the bias stability of amorphous InGaZnO TFTs using an Al2O3 passivation layerHuang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Te-Chih; Jian, Fu-Yen; Chen, Yu-Chun; Huang, Hui-Chun; Gan, Der-Shin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2015Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride-Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 FluidChang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Zhang, Rui; Chen, Kai-Huang; Chen, Jung-Hui; Chen, Min-Chen; Huang, Hui-Chun; Zhang, Wei; Lin, Chih-Yang; Tseng, Yi-Ting; Lin, Hua-Ching; Zheng, Jin-Cheng; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-Dec-2009Improvement of the performance of ZnO TFTs by low-temperature supercritical fluid technology treatmentChen, Min-Chen; Chang, Ting-Chang; Huang, Sheng-Yao; Chang, Kuan-Chang; Huang, Hui-Chun; Chen, Shih-Ching; Lu, Jin; Gan, Der-Shin; Ho, New-Jin; Young, Tai-Fa; Jhang, Geng-Wei; Tai, Ya-Hsiang; 顯示科技研究所; Institute of Display
May-2016Improving Performance by Doping Gadolinium Into the Indium-Tin-Oxide Electrode in HfO2-Based Resistive Random Access MemoryChen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Jin, Fu-Yuan; Chen, Min-Chen; Huang, Hui-Chun; Wang, Ming-Hui; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
28-Jan-2013Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memoryChen, Yu-Ting; Chang, Ting-Chang; Huang, Jheng-Jie; Tseng, Hsueh-Chih; Yang, Po-Chun; Chu, Ann-Kuo; Yang, Jyun-Bao; Huang, Hui-Chun; Gan, Der-Shin; Tsai, Ming-Jinn; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc OxideChen, Min-Chen; Chang, Ting-Chang; Huang, Sheng-Yao; Chang, Guan-Chang; Chen, Shih-Cheng; Huang, Hui-Chun; Hu, Chih-Wei; Sze, Simon M.; Tsai, Tsung-Ming; Gan, Der-Shin; Yeh (Huang), Fon-Shan; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics