Browsing by Author Huang, CT

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Showing results 1 to 18 of 18
Issue DateTitleAuthor(s)
1-Aug-2002Analysis of petroleum distillates from fire debris using supercritical fluid extraction with a two-level orthogonal array experimental designHuang, CT; Hsieh, YZ; 應用化學系; Department of Applied Chemistry
1-Jul-1998Controlling the diffusion of implanted boron in Si and silicide by multiple implantsChu, CH; Ho, KJ; Huang, CT; Shvu, SH; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2003Determination of metabolites of benzene, toluene, ethylbenzene, and xylene by beta-cyclodextrin modified capillary electrophoresisWang, CY; Huang, CT; Hsieh, YZ; 應用化學系; Department of Applied Chemistry
1-Apr-2006Elucidating the industrial cluster effect from a system dynamics perspectiveLin, CH; Tung, CM; Huang, CT; 管理科學系; Department of Management Science
1-Apr-1999Improvement of ultra-thin 3.3 nm thick oxide for co-salicide process using NF3 annealed poly-gateChang, TY; Lei, TF; Chao, TS; Huang, CT; Chen, SK; Tuan, A; Chou, S; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-1996The influence of Ge-implantation on the electrical characteristics of the ultra-shallow junction formed by using silicide as a diffusion sourceHuang, CT; Lei, TF; Chu, CH; Shvu, SH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2001Investigation on ESD robustness of CMOS devices in a 1.8-v 0.15-mu m partially-depleted SOI salicide CMOS technologyKer, MD; Hong, KK; Chen, TY; Tang, H; Huang, SC; Chen, SS; Huang, CT; Wang, MC; Loh, YT; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005A new observation of the germanium outdiffusion effect on the hot carrier and NBTI reliabilities in sub-100nm technology strained-Si/SiGe CMOS devicesChung, SS; Liu, YR; Yeh, CF; Wu, SR; Lai, CS; Chang, TY; Ho, JH; Liu, CY; Huang, CT; Tsai, CT; Shiau, WT; Sun, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003A novel leakage current separation technique in a direct Tunneling regime gate oxide SONOS memory cellChung, SS; Chiang, PY; Chou, G; Huang, CT; Chen, P; Chu, CH; Hsu, CCH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-1997On liquid-phase deposition of silicon dioxide by boric acid additionChang, PH; Huang, CT; Shie, JS; 材料科學與工程學系; 光電工程學系; Department of Materials Science and Engineering; Department of Photonics
1-Mar-1997On liquid-phase deposition of silicon dioxide by boric acid additionChang, PH; Huang, CT; Shie, JS; 材料科學與工程學系; 光電工程研究所; Department of Materials Science and Engineering; Institute of EO Enginerring
2000Optimization of short channel effect by arsenic P-Halo implant through polysilicon gate for 0.12uw P-MOSFETChen, C; Chang, CY; Chou, JW; Huang, CT; Lin, KC; Cheng, YC; Lin, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Nov-2002Optimization of the headspace solid-phase microextraction for determination of glycol ethers by orthogonal array designsHuang, CT; Su, YY; Hsieh, YZ; 應用化學系; Department of Applied Chemistry
1-Jun-1996Photoassisted liquid-phase deposition of silicon dioxideHuang, CT; Chang, PH; Shie, JS; 材料科學與工程學系; 光電工程學系; Department of Materials Science and Engineering; Department of Photonics
1-Jun-1996Photoassisted liquid-phase deposition of silicon dioxideHuang, CT; Chang, PH; Shie, JS; 材料科學與工程學系; 光電工程研究所; Department of Materials Science and Engineering; Institute of EO Enginerring
1-Sep-1998A study of tilt angle effect on Halo PMOS performanceSu, JG; Wong, SC; Huang, CT; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006Temperature effects of n-MOSFET devices with uniaxial mechanical strainsTsai, MN; Chang, TC; Liu, PT; Cheng, O; Huang, CT; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
1-May-1996Trends in outbound tourism from TaiwanHuang, CT; Yung, CY; Huang, JH; 管理科學系; Department of Management Science