Browsing by Author Hsieh, Y. C.

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Showing results 1 to 5 of 5
Issue DateTitleAuthor(s)
2008An AlGaAs/InGaAs HEMT Grown on Si Substrate with Ge/GexSi1-x Metamorphic Buffer LayersChang, Edward Yi; Lin, Yueh-Chin; Hsiao, Yu-Lin; Hsieh, Y. C.; Chang, Chia-Yuan; Kuo, Chien-I; Luo, Guang-Li; 材料科學與工程學系; Department of Materials Science and Engineering
8-Jan-2007Growth of very-high-mobility AlGaSb/InAs high-electron-mobility transistor structure on si substrate for high speed electronic applicationsLin, Y. C.; Yamaguchi, H.; Chang, E. Y.; Hsieh, Y. C.; Ueki, M.; Hirayama, Y.; Chang, C. Y.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Feb-2009Improved electrochemical performances by carbon nanocapsules as an electrocatalyst support for direct methanol fuel cellsChang, Y. M.; Hsieh, Y. C.; Wu, R. W.; 材料科學與工程學系; Department of Materials Science and Engineering
15-Sep-2006Self-assembled In0.22Ga0.78As quantum dots grown on metamorphic GaAs/Ge/SixGe1-x/Si substrateHsieh, Y. C.; Chang, E. Y.; Luo, G. L.; Chen, S. H.; Biswas, Dhrubes; Wang, S. Y.; Chang, C. Y.; 材料科學與工程學系; Department of Materials Science and Engineering
19-Feb-2007Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1-x metamorphic buffer layer for the growth of Ge layer on Si substrateHsieh, Y. C.; Chang, E. Y.; Luo, G. L.; Pilkuhn, M. H.; Tang, S. S.; Chang, C. Y.; Yang, J. Y.; Chung, H. W.; 材料科學與工程學系; Department of Materials Science and Engineering