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公開日期標題作者
1-十二月-2018AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As OxidantsWang, Huan-Chung; Hsieh, Ting-En; Lin, Yueh-Chin; Luc, Quang Ho; Liu, Shih-Chien; Wu, Chia-Hsun; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
七月-2016Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN (X) Schottky Metal Structures for High-Power ApplicationsHsieh, Ting-En; Lin, Yueh-Chin; Chu, Chung-Ming; Chuang, Yu-Lin; Huang, Yu-Xiang; Shi, Wang-Cheng; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Lee, Wei-I; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子物理學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-一月-2017Bias- and Temperature-Assisted Trapping/De-trapping of R-ON Degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrateZhang, Jin-Ming; Hsieh, Ting-En; Wu, Tian-Li; Chen, Szu-Hao; Chen, Shi-Xuan; Chou, Po-Chien; Chang, Edward Yi; 機械工程學系; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Mechanical Engineering; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-五月-2018Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applicationsChou, Po-Chien; Hsieh, Ting-En; Cheng, Stone; del Alamo, Jesus A.; Chang, Edward Yi; 機械工程學系; 材料科學與工程學系; Department of Mechanical Engineering; Department of Materials Science and Engineering
1-十月-2015Effect of high voltage stress on the DC performance of the Al2O3/AlN GaN metal-insulator-semiconductor high-electron mobility transistor for power applicationsHsieh, Ting-En; Lin, Yueh-Chin; Liao, Jen-Ting; Lan, Wei-Cheng; Chin, Ping-Chieh; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 影像與生醫光電研究所; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Imaging and Biomedical Photonics; Department of Electronics Engineering and Institute of Electronics
2016The Effect of Surface Passivation on the Electrical Performance of AlG aN/GaNHEMTs with Slant Field PlatesHsu, Heng-Tung; Lin, Yueh-Chin; Huang, Lu-Che; Chang, Chia-Hua; Hsieh, Ting-En; Itoh, Yasushi; Chang, Edward Yi; 材料科學與工程學系; 國際半導體學院; Department of Materials Science and Engineering; International College of Semiconductor Technology
1-二月-2017Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching ApplicationsChou, Po-Chien; Chen, Szu-Hao; Hsieh, Ting-En; Cheng, Stone; del Alamo, Jesus A.; Chang, Edward Yi; 機械工程學系; 材料科學與工程學系; Department of Mechanical Engineering; Department of Materials Science and Engineering
1-十二月-2015GaN High-Electron-Mobility Transistor with WNx/Cu Gate for High-Power ApplicationsHsieh, Ting-En; Lin, Yueh-Chin; Li, Fang-Ming; Shi, Wang-Cheng; Huang, Yu-Xiang; Lan, Wei-Cheng; Chin, Ping-Chieh; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics
1-十月-2014GaN MIS-HEMTs With Nitrogen Passivation for Power Device ApplicationsLiu, Shih-Chien; Chen, Bo-Yuan; Lin, Yueh-Chin; Hsieh, Ting-En; Wang, Huan-Chung; Chang, Edward Yi; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
1-七月-2014Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation LayerHsieh, Ting-En; Chang, Edward Yi; Song, Yi-Zuo; Lin, Yueh-Chin; Wang, Huan-Chung; Liu, Shin-Chien; Salahuddin, Sayeef; Hu, Chenming Calvin; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-七月-2018High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device ApplicationsWu, Chia-Hsun; Han, Ping-Cheng; Liu, Shih-Chien; Hsieh, Ting-En; Lumbantoruan, Franky Juanda; Ho, Yu-Hsuan; Chen, Jian-You; Yang, Kun-Sheng; Wang, Huan-Chung; Lin, Yen-Ku; Chang, Po-Chun; Luc, Quang Ho; Lin, Yueh-Chin; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 照明與能源光電研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Lighting and Energy Photonics; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-七月-2014Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric EffectTsai, Szu-Ping; Hsu, Heng-Tung; Chiang, Che-Yang; Tu, Yung-Yi; Chang, Chia-Hua; Hsieh, Ting-En; Wang, Huan-Chung; Liu, Shih-Chien; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2015高功率電子應用之氮化鎵半導體於矽基板的元件製作與特性研究謝廷恩; Hsieh, Ting-En; 張翼; Chang, Edward-Yi; 材料科學與工程學系所