Browsing by Author Hong, M.

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 20 of 22  next >
Issue DateTitleAuthor(s)
7-Apr-2010Al(2)O(3)/Ga(2)O(3)(Gd(2)O(3)) passivation on In(0.20)Ga(0.80)As/GaAs-structural intactness with high-temperature annealingLee, Y. J.; Lee, C. H.; Tung, L. T.; Chiang, T. H.; Lai, T. Y.; Kwo, J.; Hsu, C-H; Hong, M.; 光電工程學系; Department of Photonics
7-Apr-2010Al2O3/Ga2O3(Gd2O3) passivation on In0.20Ga0.80As/GaAs-structural intactness with high-temperature annealingLee, Y. J.; Lee, C. H.; Tung, L. T.; Chiang, T. H.; Lai, T. Y.; Kwo, J.; Hsu, C-H; Hong, M.; 光電工程學系; 光電工程研究所; Department of Photonics; Institute of EO Enginerring
21-Mar-2008Correlation between crystal structure and photoluminescence for epitaxial ZnO on Si(111) using a gamma-Al(2)O(3) buffer layerLiu, W-R; Li, Y-H; Hsieh, W. F.; Hsu, C-H; Lee, W. C.; Hong, M.; Kwo, J.; 光電工程學系; Department of Photonics
1-Oct-2011Defect density reduction of the Al(2)O(3)/GaAs(001) interface by using H(2)S molecular beam passivationMerckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M.; 交大名義發表; National Chiao Tung University
1-Oct-2011Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivationMerckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M.; 交大名義發表; National Chiao Tung University
1-Jan-2009Domain Matching Epitaxial Growth of High-Quality ZnO Film Using a Y(2)O(3) Buffer Layer on Si (111)Liu, W. -R.; Li, Y. -H.; Hsieh, W. F.; Hsu, C. -H.; Lee, W. C.; Lee, Y. J.; Hong, M.; Kwo, J.; 光電工程學系; Department of Photonics
1-Jan-2009Domain Matching Epitaxial Growth of High-Quality ZnO Film Using a Y2O3 Buffer Layer on Si (111)Liu, W. -R.; Li, Y. -H.; Hsieh, W. F.; Hsu, C. -H.; Lee, W. C.; Lee, Y. J.; Hong, M.; Kwo, J.; 光電工程學系; 光電工程研究所; Department of Photonics; Institute of EO Enginerring
15-May-2011Epitaxial stabilization of a monoclinic phase in Y(2)O(3) films on c-plane GaNChang, W. H.; Chang, P.; Lee, W. C.; Lai, T. Y.; Kwo, J.; Hsu, C. -H.; Hong, J. M.; Hong, M.; 光電工程學系; Department of Photonics
15-May-2011Epitaxial stabilization of a monoclinic phase in Y2O3 films on c-plane GaNChang, W. H.; Chang, P.; Lee, W. C.; Lai, T. Y.; Kwo, J.; Hsu, C. -H.; Hong, J. M.; Hong, M.; 光電工程學系; Department of Photonics
1-May-2008Growth and structural characteristics of GaN/AlN/nanothick gamma-Al(2)O(3)/Si (111)Lee, W. C.; Lee, Y. J.; Tung, L. T.; Wu, S. Y.; Lee, C. H.; Hong, M.; Ng, H. M.; Kwo, J.; Hsu, C. H.; 光電工程學系; Department of Photonics
1-Jul-2011The Growth of an Epitaxial ZnO Film on Si(111) with a Gd(2)O(3)(Ga(2)O(3)) Buffer LayerLin, B. H.; Liu, W. R.; Yang, S.; Kuo, C. C.; Hsu, C. -H.; Hsieh, W. F.; Lee, W. C.; Lee, Y. J.; Hong, M.; Kwo, J.; 光電工程學系; Department of Photonics
1-Jul-2011The Growth of an Epitaxial ZnO Film on Si(111) with a Gd2O3(Ga2O3) Buffer LayerLin, B. H.; Liu, W. R.; Yang, S.; Kuo, C. C.; Hsu, C. -H.; Hsieh, W. F.; Lee, W. C.; Lee, Y. J.; Hong, M.; Kwo, J.; 光電工程學系; 光電工程研究所; Department of Photonics; Institute of EO Enginerring
1-Apr-2011H(2)S molecular beam passivation of Ge(001)Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; El-Kazzi, M.; Bellenger, F.; Brammertz, G.; Hong, M.; Kwo, J.; Meuris, M.; Dekoster, J.; Heyns, M. M.; Caymax, M.; 交大名義發表; National Chiao Tung University
1-Apr-2011H2S molecular beam passivation of Ge(001)Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; El-Kazzi, M.; Bellenger, F.; Brammertz, G.; Hong, M.; Kwo, J.; Meuris, M.; Dekoster, J.; Heyns, M. M.; Caymax, M.; 交大名義發表; National Chiao Tung University
1-May-2008High-quality nanothick single-crystal Y(2)O(3) films epitaxially grown on Si (111): Growth and structural characteristicsLee, Y. J.; Lee, W. C.; Nieh, C. W.; Yang, Z. K.; Kortan, A. R.; Hong, M.; Kwo, J.; Hsu, C. -H.; 光電工程學系; Department of Photonics
2012The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a gamma-Al2O3 buffer layerLiu, W. -R.; Lin, B. H.; Yang, S.; Kuo, C. C.; Li, Y. -H.; Hsu, C. -H.; Hsieh, W. F.; Lee, W. C.; Hong, M.; Kwo, J.; 光電工程學系; Department of Photonics
15-May-2011MBE-Enabling technology beyond Si CMOSChang, P.; Lee, W. C.; Lin, T. D.; Hsu, C. H.; Kwo, J.; Hong, M.; 光電工程學系; Department of Photonics
1-Dec-2010Structural Characteristics of Nanometer Thick Gd(2)O(3) Films Grown on GaN (0001)Chang, W. H.; Chang, P.; Lai, T. Y.; Lee, Y. J.; Kwo, J.; Hsu, C-H; Hong, M.; 光電工程學系; Department of Photonics
1-Dec-2010Structural Characteristics of Nanometer Thick Gd2O3 Films Grown on GaN (0001)Chang, W. H.; Chang, P.; Lai, T. Y.; Lee, Y. J.; Kwo, J.; Hsu, C-H; Hong, M.; 光電工程學系; Department of Photonics
18-Sep-2006Structure of HfO2 films epitaxially grown on GaAs(001)Hsu, C. -H.; Chang, P.; Lee, W. C.; Yang, Z. K.; Lee, Y. J.; Hong, M.; Kwo, J.; Huang, C. M.; Lee, H. Y.; 光電工程學系; Department of Photonics