Browsing by Author Fang, CY

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 10 of 10
Issue DateTitleAuthor(s)
2001AIGaN Schottky characteristics after hybrid photo-enhanced wet and inductively coupled plasma etchHuang, WJ; Fang, CY; Wong, JS; Lee, CS; Chang, EY; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
2001AIGaN/GaN HEMT sub-bands study using low-temperature photoluminescenceFang, CY; Lin, CF; Lee, CS; Chang, EY; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jul-2003Etching damages on AlGaN, GaN and InGaN caused by hybrid inductively coupled plasma etch and photoenhanced chemical wet etch by Schottky contact characterizationsFang, CY; Huang, WJ; Chang, EY; Lin, CF; Feng, MS; 材料科學與工程學系; 光電工程學系; Department of Materials Science and Engineering; Department of Photonics
1-Aug-1997Graphical method for the determination of the complex NMR shift and equilibrium constant for a hetero-association accompanying self-associationsLin, CC; Fang, CY; Kao, DY; Chen, JS; 交大名義發表; 應用化學系; National Chiao Tung University; Department of Applied Chemistry
1-Aug-1997Graphical method for the determination of the complex NMR shift and equilibrium constant for a hetero-association accompanying self-associationsLin, CC; Fang, CY; Kao, DY; Chen, JS; 應用化學系; Department of Applied Chemistry
1-Jan-1997Monomer shift, dimer shift and dimerization constant for self-association determined graphically from the NMR dilution shift: Pyrrolidone in CDCl3 as an exampleChen, JS; Fang, CY; Baird, JK; 應用化學系; Department of Applied Chemistry
1-Jan-1997Monomer shift, dimer shift and dimerization constant for self-association determined graphically from the NMR dilution shift: Pyrrolidone in CDCl3 as an exampleChen, JS; Fang, CY; Baird, JK; 應用化學系; Department of Applied Chemistry
2001A novel I-line phase shift mask (PSM) technique for submicron T-Gate formationFu, DK; Chang, HC; Fang, CY; Lee, CS; Chang, EY; 材料科學與工程學系; Department of Materials Science and Engineering
17-Jun-2002A study of subbands in AlGaN/GaN high-electron-mobility transistor structures using low-temperature photoluminescence spectroscopyFang, CY; Lin, CF; Chang, EY; Feng, MS; 材料科學與工程學系; 光電工程學系; Department of Materials Science and Engineering; Department of Photonics
1-Jul-2003Study of titanium tungsten nitride and tungsten nitride Schottky contacts on n-GaNLee, CS; Chang, EY; Chang, L; Fang, CY; Huang, YL; Huang, JS; 材料科學與工程學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; D Link NCTU Joint Res Ctr