Browsing by Author Department of Materials Science and Engineering

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Issue DateTitleAuthor(s)
15-Oct-2000A 1.2-V operation power pseudomorphic high electron mobility transistor for personal handy phone handset applicationChang, EY; Lee, DH; Chen, SH; 材料科學與工程學系; Department of Materials Science and Engineering
1-Dec-20052,8-Bis(3-phenylquinoxalin-2-yl)-5 lambda(6)-dibenzo[b,d] thiophene-5,5-dioneHuang, TH; Whang, WT; Wen, YS; Lin, JT; 材料科學與工程學系; Department of Materials Science and Engineering
9-Oct-20132-Alkyl-5-thienyl-Substituted Benzo[1,2-b:4,5-b ']dithiophene-Based Donor Molecules for Solution-Processed Organic Solar CellsPatra, Dhananjaya; Huang, Tzu-Yen; Chiang, Chao-Cheng; Maturana, Ramon Orlando Valencia; Pao, Chun-Wei; Ho, Kuo-Chuan; Wei, Kung-Hwa; Chu, Chih-Wei; 材料科學與工程學系; 光電工程學系; Department of Materials Science and Engineering; Department of Photonics
2007A 2-bit/cell, maskless, self-aligned resistance memory with high thermal stabilityHe, ChiaHua; Lee, Ming-Daou; Pan, Chen-Ling; Lai, Erb-Kun; Yao, Yeong-Der; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan; 材料科學與工程學系; Department of Materials Science and Engineering
1-Dec-20052-phenyl-3-[6-(3-phenylquinoxalin-2-yl)-dibenzo[b,d]thiophen-3-yl]quinoxalineHuang, TH; Whang, WT; Wen, YS; Lin, JT; 材料科學與工程學系; Department of Materials Science and Engineering
20012.4 V-operated enhancement mode PHEMT with 32 dBm output power and 61 % power efficenciecyChen, SH; Chang, EY; Lin, YC; 材料科學與工程學系; Department of Materials Science and Engineering
15-Sep-19942H PHASE IN A CU2MNAL ALLOYJENG, SC; LIU, TF; 交大名義發表; 材料科學與工程學系; National Chiao Tung University; Department of Materials Science and Engineering
1-May-20152H-Silicon Carbide Epitaxial Growth on c-Plane Sapphire Substrate Using an AlN Buffer Layer and Effects of Surface Pre-TreatmentsLuong, Tien-Tung; Binh Tinh Tran; Ho, Yen-Teng; Wei, Ting-Wei; Wu, Yue-Han; Yen, Tzu-Chun; Wei, Lin-Lung; Maa, Jer-Shen; Chang, Edward Yi; 材料科學與工程學系; 光電學院; 電子工程學系及電子研究所; Department of Materials Science and Engineering; College of Photonics; Department of Electronics Engineering and Institute of Electronics
20053-D simulation on current density distribution in flip-cbip solder joints with thick CuUBM under current stressingLiang, SW; Shao, TL; Chen, C; 材料科學與工程學系; Department of Materials Science and Engineering
201330 GHz 2-Stage MMIC Low Noise Amplifier using GaAs Pseudomorphic HEMTRasmi, Amiza; Azmi, I. M.; Rahim, A. I. A.; Hsu, Heng-Tung; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-Feb-201030-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTsChang, Chia-Ta; Hsu, Heng-Tung; Chang, Edward Yi; Kuo, Chien-I; Huang, Jui-Chien; Lu, Chung-Yu; Miyamoto, Yasuyuki; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2009A 40-nm-Gate InAs/In(0.7)Ga(0.3)As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f(T)Kuo, Chien-I; Hsu, Heng-Tung; Wu, Chien-Ying; Chang, Edward Yi; Miyamoto, Yasuyuki; Chen, Yu-Lin; Biswas, Dhrubes; 材料科學與工程學系; Department of Materials Science and Engineering
1-Oct-2009460-nm InGaN-Based LEDs Grown on Fully Inclined Hemisphere-Shape-Patterned Sapphire Substrate With Submicrometer SpacingChang, Chia-Ta; Hsiao, Shih-Kuang; Chang, Edward Yi; Hsiao, Yu-Lin; Huang, Jui-Chien; Lu, Chung-Yu; Chang, Huang-Choung; Cheng, Kai-Wen; Lee, Ching-Ting; 材料科學與工程學系; Department of Materials Science and Engineering
1-May-19965 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applicationsLai, YL; Chang, EY; Chang, CY; Chen, TK; Liu, TH; Wang, SP; Chen, TH; Lee, CT; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-May-19965 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applicationsLai, YL; Chang, EY; Chang, CY; Chen, TK; Liu, TH; Wang, SP; Chen, TH; Lee, CT; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Nov-200760 GHz broadband Ms-to-CPW hot-via flip chip interconnectsWu, Wei-Cheng; Hsu, Li-Han; Chang, Edward Yi; Kaernfelt, Camilla; Zirath, Herbert; Starski, J. Piotr; Wu, Yun-Chi; 材料科學與工程學系; Department of Materials Science and Engineering
Feb-2016A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applicationsFatah, Faiz Aizad; Lin, Yueh-Chin; Liu, Ren-Xuan; Yang, Kai-Chun; Lin, Tai-We; Hsu, Heng-Tung; Yang, Jung-Hsiang; Miyamoto, Yasuyuki; Iwai, Hiroshi; Hu, Chenming Calvin; Salahuddin, Sayeef; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
25-Oct-200760GHz broadband 0/1-level RF-via interconnect for RF-MEMS packagingWu, Wc.; Hsu, L. H.; Chang, E. Y.; Starski, J. P.; Zirath, H.; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jan-2010An 80 nm In(0.7)Ga(0.3)As MHEMT with Flip-Chip Packaging for W-Band Low Noise ApplicationsWang, Chin-Te; Kuo, Chien-I; Lim, Wee-Chin; Hsu, Li-Han; Hsu, Heng-Tung; Miyamoto, Yasuyuki; Chang, Edward Yi; Tsai, Szu-Ping; Chiu, Yu-Sheng; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jan-2010An 80 nm In0.7Ga0.3As MHEMT with Flip-Chip Packaging for W-Band Low Noise ApplicationsWang, Chin-Te; Kuo, Chien-, I; Lim, Wee-Chin; Hsu, Li-Han; Hsu, Heng-Tung; Miyamoto, Yasuyuki; Chang, Edward Yi; Tsai, Szu-Ping; Chiu, Yu-Sheng; 材料科學與工程學系; Department of Materials Science and Engineering