Browsing by Author Cheng, C. H.

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Issue DateTitleAuthor(s)
1-Apr-2013Achieving low sub-0.6-nm EOT in gate-first n-MOSFET with TiLaO/CeO2 gate stackCheng, C. H.; Chou, K. I.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
29-Sep-2006An analytical solution for transport of oxygen in cathode gas diffusion layer of PEMFCTsai, C. R.; Chen, Falin; Ruo, A. C.; Chang, Min-Hsing; Chu, Hsin-Sen; Soong, C. Y.; Yan, W. M.; Cheng, C. H.; 機械工程學系; Department of Mechanical Engineering
15-Aug-2011Bipolar conductivity in amorphous HfO(2)Islamov, D. R.; Gritsenko, V. A.; Cheng, C. H.; Chin, A.; 交大名義發表; National Chiao Tung University
15-Aug-2011Bipolar conductivity in amorphous HfO2Islamov, D. R.; Gritsenko, V. A.; Cheng, C. H.; Chin, A.; 交大名義發表; National Chiao Tung University
1-Jan-1970Bipolar conductivity in nanocrystallized TiO2Islamov, D. R.; Gritsenko, V. A.; Cheng, C. H.; Chin, A.; 交大名義發表; National Chiao Tung University
1-Aug-2011Bipolar switching characteristics of low-power Geo resistive memoryCheng, C. H.; Chen, P. C.; Liu, S. L.; Wu, T. L.; Hsu, H. H.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2017Channel Modification Engineering by Plasma Processing in Tin-Oxide Thin Film Transistor: Experimental Results and First-Principles CalculationChiu, Y. C.; Chen, P. C.; Chang, S. L.; Zheng, Z. W.; Cheng, C. H.; Liou, G. L.; Kao, H. L.; Wu, Y. H.; Chang, C. Y.; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
2010Characteristics of Cerium Oxide for Metal-Insulator-Metal CapacitorsCheng, C. H.; Hsu, H. H.; Chen, W. B.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
9-Mar-2015Charge transport in amorphous Hf0.5Zr0.5O2Islamov, D. R.; Perevalov, T. V.; Gritsenko, V. A.; Cheng, C. H.; Chin, A.; 交大名義發表; National Chiao Tung University
1-Jan-2018Chip-Level Characterization and RTN-Induced Error Mitigation beyond 20nm Floating Gate Flash MemoryLin, T. W.; Ku, S. H.; Cheng, C. H.; Lee, C. W.; Ijen-Huang; Tsai, Wen-Jer; Lu, T. C.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2017Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illuminationChiu, Y. C.; Zheng, Z. W.; Cheng, C. H.; Chen, P. C.; Yen, S. S.; Fan, C. C.; Hsu, H. H.; Kao, H. L.; Chang, C. Y.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2018Error Characterization and ECC Usage Relaxation beyond 20nm Floating Gate NAND Flash MemoryKu, S. H.; Lin, T. W.; Cheng, C. H.; Lee, C. W.; Chen, Ti-Wen; Tsai, Wen-Jer; Lu, T. C.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2-Dec-2013Evolution of the conductivity type in germania by varying the stoichiometryIslamov, D. R.; Gritsenko, V. A.; Cheng, C. H.; Chin, A.; 交大名義發表; National Chiao Tung University
15-Dec-2017A facile method to prepare "green" nano-phosphors with a large Stokes-shift and solid-state enhanced photophysical properties based on surface-modified gold nanoclustersCheng, C. H.; Huang, H. Y.; Talite, M. J.; Chou, W. C.; Yeh, J. M.; Yuan, C. T.; 電子物理學系; Department of Electrophysics
2010Flow Rate's Influence on Low Temperature Silicon Oxide Deposited by Atmospheric Pressure Plasma Jet for Organic Thin Film Transistor ApplicationChang, K. M.; Huang, S. S.; Cheng, C. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2013Gate-first n-MOSFET with a sub-0.6-nm EOT gate stackCheng, C. H.; Chou, K. I.; Chin, A.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2010High Capacitance Density and Thermal Leakage Improvement by Using High-kappa Al(2)O(3)-Doped SrTiO(3) MIM CapacitorsHuang, C. C.; Cheng, C. H.; Lin, C. W.; Chang, L. M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2010High Capacitance Density and Thermal Leakage Improvement by Using High-kappa Al2O3-Doped SrTiO3 MIM CapacitorsHuang, C. C.; Cheng, C. H.; Lin, C. W.; Chang, L. M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2008High density and low leakage current in TiO(2) MIM capacitors processed at 300 degrees CCheng, C. H.; Lin, S. H.; Jhou, K. Y.; Chen, W. J.; Chou, C. P.; Yeh, F. S.; Hu, J.; Hwang, M.; Arikado, T.; McAlister, S. P.; 機械工程學系; 電子工程學系及電子研究所; Department of Mechanical Engineering; Department of Electronics Engineering and Institute of Electronics
1-Jan-2014High Mobility InGaZnO Thin Film Transistor Using Narrow-Bandgap Titanium-Oxide Semiconductor as Channel Capping LayerHsu, H. H.; Chiou, P.; Chiu, Y. C.; Yen, S. S.; Chang, C. Y.; Cheng, C. H.; 電機工程學系; Department of Electrical and Computer Engineering