Browsing by Author Chen, Po-Hsun

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Issue DateTitleAuthor(s)
Oct-2016Adjustable built-in resistor on oxygen-vacancy-rich electrode-capped resistance random access memoryPan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Chen, Po-Hsun; Chen, Min-Chen; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2013The Analysis of Nano-Patterned Sapphire Substrates-Induced Compressive Strain to Enhance Quantum-Confined Stark Effect of InGaN-Based Light-Emitting DiodesChen, Po-Hsun; Su, Vincent; You, Yao-Hong; Lee, Ming-Lun; Hsieh, Cheng-Ju; Kuan, Chieh-Hsiung; Chen, Hung-Ming; Yang, Han-Bo; Lin, Hung-Chou; Lin, Ray-Ming; Chu, Fu-Chuan; Su, Gu-Yi; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2018Analyzing Electric Field Effect by Applying an Ultra-Short Time Pulse Condition in Hafnium Oxide-Based RRAMWu, Cheng-Hsien; Lin, Shih-Kai; Pan, Chih-Hung; Chen, Po-Hsun; Lin, Wen-Yan; Chang, Ting-Chang; Tsai, Tsung-Ming; Xu, You-Lin; Shih, Chih-Cheng; Lin, Yu-Shuo; Chen, Wen-Chung; Wang, Ming-Hui; Zhang, Sheng-Dong; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
7-Jul-2017Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrodeLin, Chih-Yang; Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Sheng-Dong; Tsai, Tsung-Ming; Pan, Chih-Hung; Chen, Min-Chen; Su, Yu-Ting; Tseng, Yi-Ting; Chang, Yao-Feng; Chen, Ying-Chen; Huang, Hui-Chun; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2018The Demonstration of Increased Selectivity During Experimental Measurement in Filament-Type Vanadium Oxide-Based SelectorChen, Chun-Kuei; Lin, Chih-Yang; Chen, Po-Hsun; Chang, Ting-Chang; Shih, Chih-Cheng; Tseng, Yi-Ting; Zheng, Hao-Xuan; Chen, Ying-Chen; Chang, Yao-Feng; Lin, Chun-Chu; Huang, Hui-Chun; Huang, Wei-Chen; Wang, Hao; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2017Effect of charge quantity on conduction mechanism of high-and low-resistance states during forming process in a one-transistor-one-resistor resistance random access memoryWu, Cheng-Hsien; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Pan, Chih-Hung; Su, Yu-Ting; Chen, Po-Hsun; Lin, Shih-Kai; Hu, Shih-Jie; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Mar-2016Effects of erbium doping of indium tin oxide electrode in resistive random access memoryChen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Jin, Fu-Yuan; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
31-Oct-2016Engineering interface-type resistance switching based on forming current compliance in ITO/Ga2O3: ITO/TiN resistance random access memory: Conduction mechanisms, temperature effects, and electrode influencePan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Po-Hsun; Chang-Chien, Shi-Wang; Chen, Min-Chen; Huang, Hui-Chun; Wu, Huaqiang; Deng, Ning; Qian, He; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
9-Nov-2018Enhancement of Surface Chemical and Physical Properties of Germanium-Sulfur Thin Film Using a Water-Supplemented Carbon Dioxide Supercritical Fluid Treatment TechniqueYang, Chih-Cheng; Chen, Po-Hsun; Shih, Chih-Cheng; Wang, Ming-Hui; Tsai, Tsung-Ming; Zheng, Hao-Xuan; Chen, Wen-Chung; Chen, Min-Chen; Huang, Hui-Chun; Ma, Xiao-Hua; Hao, Yue; Huang, Jen-Wei; Sze, Simon M.; Chang, Ting-Chang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
May-2016Improving Performance by Doping Gadolinium Into the Indium-Tin-Oxide Electrode in HfO2-Based Resistive Random Access MemoryChen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Jin, Fu-Yuan; Chen, Min-Chen; Huang, Hui-Chun; Wang, Ming-Hui; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2017Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memoryWu, Cheng-Hsien; Pan, Chih-Hung; Chen, Po-Hsun; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Shih, Chih-Cheng; Chi, Ting-Yang; Chu, Tian-Jian; Wu, Jia-Ji; Du, Xiaoqin; Zheng, Hao-Xuan; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2019Investigating Material Changes at Different Gadolinium Doping Power Levels in Indium-Tin Oxide Intended for Use as an Insulator in Resistive Switching MemoryLin, Chun-Chu; Chen, Po-Hsun; Chen, Min-Chen; Chang, Ting-Chang; Lin, Chih-Yang; Zheng, Hao-Xuan; Chen, Chun-Kuei; Huang, Wei-Chen; Chen, Wen-Chung; Huang, Hui-Chun; Tsai, Tsung-Ming; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Nov-2016Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access MemoryChen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Su, Yu-Ting; Wu, Cheng-Hsien; Su, Wan-Ching; Yang, Chih-Cheng; Chen, Min-Chen; Tu, Chun-Hao; Chen, Kai-Huang; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Dec-2016Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium-Tin Oxide Insulator in Resistive Random Access MemoryChen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Shih, Chih-Cheng; Wu, Cheng-Hsien; Yang, Cheng-Chi; Su, Yu-Ting; Lin, Chih-Yang; Tseng, Yi-Ting; Chen, Min-Chen; Wang, Ruey-Chi; Leu, Ching-Chich; Chen, Kai-Huang; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2017Recovery of failed resistive switching random access memory devices by a low-temperature supercritical treatmentDu, Xiaoqin; Wu, Xiaojing; Chang, Ting-Chang; Chang, Kuan-Chang; Pan, Chih-Hung; Wu, Cheng-Hsien; Lin, Yu-Shuo; Chen, Po-Hsun; Zhang, Shengdong; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Jun-2016Reducing operation voltages by introducing a low-k switching layer in indium-tin-oxide-based resistance random access memoryJin, Fu-Yuan; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Chen, Po-Hsun; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-Jan-2017Resistance Switching Characteristics Induced by O-2 Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access MemoryChen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Chen, Min-Chen; Su, Yu-Ting; Lin, Chih-Yang; Tseng, Yi-Ting; Huang, Hui-Chun; Wu, Huaqiang; Deng, Ning; Qian, He; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Apr-2016Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access MemoryTsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Zhang, Rui; Wang, Tong; Pan, Chih-Hung; Chen, Kai-Huang; Chen, Hua-Mao; Chen, Min-Chen; Tseng, Yi-Ting; Chen, Po-Hsun; Lo, Ikai; Zheng, Jin-Cheng; Lou, Jen-Chung; Sze, Simon M.; 光電工程學系; Department of Photonics
1-Dec-2014Separate Clock Network Voltage for Correcting Random Errors in ULV Clocked Storage CellsLuo, Shien-Chun; Chang, Kuo-Chiang; Chen, Ming-Pin; Huang, Ching-Ji; Chiu, Yi-Fang; Chen, Po-Hsun; Cheng, Liang-Chia; Liu, Chih-Wei; Chu, Yuan-Hua; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2017Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High-k Spacer StructureTseng, Yi-Ting; Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Shih, Chih-Cheng; Huang, Hui-Chun; Yang, Cheng-Chi; Lin, Chih-Yang; Wu, Cheng-Hsien; Zheng, Hao-Xuan; Zhang, Shengdong; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics