Browsing by Author Chen, Ming-Jer

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Issue DateTitleAuthor(s)
1-Dec-2007A constant-mobility method to enable MOSFET series-resistance extractionLin, Da-Wen; Cheng, Ming-Lung; Wang, Shyh-Wei; Wu, Chung-Cheng; Chen, Ming-Jer; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2015Criteria for Plasmon-Enhanced Electron Drag in Si Metal-Oxide-Semiconductor DevicesChen, Ming-Jer; Hsieh, Shang-Hsun; Liao, Yu-Chiao; Chen, Chuan-Li; Tsai, Ming-Fu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2009Distinguishing Between STI Stress and Delta Width in Gate Direct Tunneling Current of Narrow n-MOSFETsHsieh, Chen-Yu; Lin, Yi-Tang; Chen, Ming-Jer; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2013Effect of Strained k . p Deformation Potentials on Hole Inversion-Layer MobilityChen, Ming-Jer; Lee, Chien-Chih; Chen, Wan-Li; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
16-Oct-2006Effect of uniaxial strain on anisotropic diffusion in siliconChen, Ming-Jer; Sheu, Yi-Ming; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2008Electrical measurement of local stress and lateral diffusion near Source/Drain extension corner of uniaxially stressed n-MOSFETsHsieh, Chen-Yu; Chen, Ming-Jer; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2009Enhanced Hole Gate Direct Tunneling Current in Process-Induced Uniaxial Compressive Stress p-MOSFETsHsu, Chih-Yu; Lee, Chien-Chih; Lin, Yi-Tang; Hsieh, Chen-Yu; Chen, Ming-Jer; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2013Error-Free Matthiessen's Rule in the MOSFET Universal Mobility RegionChen, Ming-Jer; Lee, Wei-Han; Huang, Yi-Hui; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2012Evidence for a Very Small Tunneling Effective Mass (0.03m(0)) in MOSFET High-k (HfSiON) Gate DielectricsChen, Ming-Jer; Hsu, Chih-Yu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2012Evidence for the Fourfold-Valley Confinement Electron Piezo-Effective-Mass Coefficient in Inversion Layers of < 110 > Uniaxial-Tensile-Strained (001) nMOSFETsChen, Ming-Jer; Lee, Wei-Han; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2010An Extreme Surface Proximity Push for Embedded SiGe in pMOSFETs Featuring Self-Aligned Silicon ReflowLin, Da-Wen; Chen, Chien-Liang; Chen, Ming-Jer; Wu, Chung-Cheng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2011Gate Direct Tunneling Current in Uniaxially Compressive Strained nMOSFETs: A Sensitive Measure of Electron Piezo Effective MassLee, Wei-Han; Chen, Ming-Jer; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2015Graphically Transforming Mueller-Schulz Percolation Criteria to Random Telegraph Signal Magnitudes in Scaled FETsChen, Ming-Jer; Tu, Kong-Chiang; Chuang, Li-Yang; Wang, Huan-Hsiung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2011Hole Effective Masses as a Booster of Self-Consistent Six-Band k . p Simulation in Inversion Layers of pMOSFETsChen, Ming-Jer; Lee, Chien-Chih; Cheng, Kuan-Hao; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
23-Jul-2009Intercrossed Sheet-Like Ga-Doped ZnS Nanostructures with Superb Photocatalytic Actvitiy and PhotoresponseLu, Ming-Yen; Lu, Ming-Pei; Chung, Yao-An; Chen, Ming-Jer; Wang, Zhong Lin; Chen, Lih-Juann; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2007Measurement of channel stress using gate direct tunneling current in uniaxially stressed nMOSFETsHsieh, Chen-Yu; Chen, Ming-Jer; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2011A Method of Extracting Metal-Gate High-k Material Parameters Featuring Electron Gate Tunneling Current TransitionHsu, Chih-Yu; Chang, Hua-Gang; Chen, Ming-Jer; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2008A millisecond-anneal-assisted selective fully silicided (FUSI) gate processLin, Da-Wen; Wang, Maureen; Cheng, Ming-Lung; Sheu, Yi-Ming; Tarng, Bennet; Chu, Che-Min; Nieh, Chun-Wen; Lo, Chia-Ping; Tsai, Wen-Chi; Lin, Rachel; Wang, Shyh-Wei; Cheng, Kuan-Lun; Wu, Chii-Ming; Lei, Ming-Ta; Wu, Chung-Cheng; Diaz, Carlos H.; Chen, Ming-Jer; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2017A Model for Neutral Defect Limited Electron Mobility in Strained-Silicon Inversion LayersHsieh, Shang-Hsun; Chen, Ming-Jer; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-2006Modeling the well-edge proximity effect in highly scaled MOSFETsSheu, Yi-Ming; Su, Ke-Wei; Tian, Shiyang; Yang, Sheng-Jier; Wang, Chih-Chiang; Chen, Ming-Jer; Liu, Sally; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics