Browsing by Author Chen, King-Sheng

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Showing results 1 to 5 of 5
Issue DateTitleAuthor(s)
2007Comparisons on performance improvement by nitride capping layer among different channel directions nMOSFETsTsai, Tzu-, I; Lee, Yao-Jen; Chen, King-Sheng; Wang, Jeff; Hsueh, Fu-Kuo; Lin, Horng-Chih; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Impacts of a buffer layer and hi-wafers on the performance of strained-channel NMOSFETs with SiN capping layerTsai, Tzu-, I; Lee, Yao-Jen; Chen, King-Sheng; Wang, Jeff; Wan, Chia-Chen; Hsueh, Fu-Kuo; Lin, Horng-Chih; Chao, Tien-Sheng; Huang, Tiao-Yuan; 物理研究所; 電子工程學系及電子研究所; Institute of Physics; Department of Electronics Engineering and Institute of Electronics
1-Oct-2008Impacts of a buffer layer and hydrogen-annealed wafers on the performance of strained-channel nMOSFETs with SiN-capping layerTsai, Tzu-I; Lin, Horng-Chih; Lee, Yao-Jen; Chen, King-Sheng; Wang, Jeff; Hsueh, Fu-Kuo; Chao, Tien-Sheng; Huang, Tiao-Yuan; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
2007Reliability of strained-channel NMOSFETs with SiN capping layer on Hi-wafers with a thin LPCVD-TEOS buffer layerTsai, Tzu-, I; Lee, Yao-Jen; Chen, King-Sheng; Wang, Jeff; Wan, Chia-Chen; Hsueh, Fu-Kuo; Lin, Horng-Chih; Cha, Tien-Sheng; Huang, Tiao-Yuan; 物理研究所; 電子工程學系及電子研究所; Institute of Physics; Department of Electronics Engineering and Institute of Electronics
2008Trapping and de-trapping characteristics in PBTI and dynamic PBTI between HfO2 and HfSiON gate dielectricsLin, We-Liang; Lee, Yao-Jen; Lo, Wen-Cheng; Chen, King-Sheng; Hou, Y. T.; Lin, K. C.; Chao, Tien-Sheng; 電子物理學系; Department of Electrophysics